Zinc oxide (ZnO) has attracted considerable attention because of its potential applications in optoelectronic devices. Many scientists have reported on the preparation of ZnO based photodetectors in metal-semiconductor-metal (MSM) structures where expensive noble metals are used as electrodes. Here, we propose the preparation of full metal-oxide photoconductors by using indium tin oxide (ITO) as the electrodes and ZnO thin films as sensing materials. ZnO thin films were prepared by employing a simple ultrasonic spray pyrolysis (USP) technique with a commercial ultrasonic nebulizer (1.7 MHz). In this work, we developed a high performance ZnO based photodetector on interdigitated ITO with a simple and low-cost USP method. The I-V characteristic shows that ZnO thin film works in a photoconductive mode and has better performance as a UV (325 nm) detector than other wavelengths (505, 625 and 810 nm). As a UV detector, the devices exhibit high sensitivity (1255.51%), high responsivity (22.6 x 103 A/W), high detectivity (1.49 x 1014 Jones), good stability, a fast response time of 0.87 s and a relatively slow recovery time of 34.8 s. This high performance may be related to the large crystallite size that facilitates higher electron mobility.