Trapping of a photoexcited electron by a donor in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors

Arief Udhiarto, Daniel Moraru, Takeshi Mizuno, Michiharu Tabe

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

We study interaction of single-electron current and incident photons in nanometer-scale phosphorus-doped silicon-on-insulator field-effect transistors. Trapping events of a photoexcited-electron by a trap donor are observed as random telegraph signals in single-electron-tunneling current flowing through a current-path donor. Trapping causes a potential change at the current-path donor, inducing a current change. An opposite current change is caused by electron detrapping from the trap donor to the current-path donor. This indicates that only a few donors (two donors in this study) work in the interaction between single-electron transport and photoexcited-electron trapping, even in the presence of many donors.

Original languageEnglish
Article number113108
JournalApplied Physics Letters
Volume99
Issue number11
DOIs
Publication statusPublished - 12 Sep 2011

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