TY - JOUR
T1 - TiOx-modified NiO thin films for H2 gas sensors
T2 - Proceedings of Eurosensors XIII
AU - Imawan, C.
AU - Solzbacher, F.
AU - Steffes, H.
AU - Obermeier, E.
N1 - Funding Information:
The authors wish to thank Dr. P. Fricke of the Institute Fresenius, Dresden for the XRD measurements. Financial support through the German Ministry of Education, Research and Technology BMBF is gratefully acknowledged.
PY - 2000/8/25
Y1 - 2000/8/25
N2 - The sensitivity and selectivity of sputtered NiO thin films are found to be promoted by the addition of TiOx-overlayers. The sensing properties are strongly influenced by the sputtering parameters of the TiOx-overlayers. Among all studied films, the modified NiO thin films using TiOx-overlayers deposited in pure Ar gas with a sputtering power density of 1.59 W/cm2 have the best properties for H2 detection. The cross-sensitivity to other gases such as NO2 and NH3 is comparatively small. The response and recovery times of the sensor depend on operating temperature and gas concentrations. The sensor electrical response follows a power law behavior Rg = Ra(PH(2))β with the coefficient β ≈ 1.0.
AB - The sensitivity and selectivity of sputtered NiO thin films are found to be promoted by the addition of TiOx-overlayers. The sensing properties are strongly influenced by the sputtering parameters of the TiOx-overlayers. Among all studied films, the modified NiO thin films using TiOx-overlayers deposited in pure Ar gas with a sputtering power density of 1.59 W/cm2 have the best properties for H2 detection. The cross-sensitivity to other gases such as NO2 and NH3 is comparatively small. The response and recovery times of the sensor depend on operating temperature and gas concentrations. The sensor electrical response follows a power law behavior Rg = Ra(PH(2))β with the coefficient β ≈ 1.0.
UR - http://www.scopus.com/inward/record.url?scp=0034251549&partnerID=8YFLogxK
U2 - 10.1016/S0925-4005(00)00427-5
DO - 10.1016/S0925-4005(00)00427-5
M3 - Conference article
AN - SCOPUS:0034251549
SN - 0925-4005
VL - 68
SP - 184
EP - 188
JO - Sensors and Actuators, B: Chemical
JF - Sensors and Actuators, B: Chemical
IS - 1
Y2 - 12 September 1999 through 15 September 1999
ER -