TiOx-modified NiO thin films for H2 gas sensors: effects of TiOx-overlayer sputtering parameters

C. Imawan, F. Solzbacher, H. Steffes, E. Obermeier

Research output: Contribution to journalConference articlepeer-review

49 Citations (Scopus)

Abstract

The sensitivity and selectivity of sputtered NiO thin films are found to be promoted by the addition of TiOx-overlayers. The sensing properties are strongly influenced by the sputtering parameters of the TiOx-overlayers. Among all studied films, the modified NiO thin films using TiOx-overlayers deposited in pure Ar gas with a sputtering power density of 1.59 W/cm2 have the best properties for H2 detection. The cross-sensitivity to other gases such as NO2 and NH3 is comparatively small. The response and recovery times of the sensor depend on operating temperature and gas concentrations. The sensor electrical response follows a power law behavior Rg = Ra(PH(2))β with the coefficient β ≈ 1.0.

Original languageEnglish
Pages (from-to)184-188
Number of pages5
JournalSensors and Actuators, B: Chemical
Volume68
Issue number1
DOIs
Publication statusPublished - 25 Aug 2000
EventProceedings of Eurosensors XIII - The Hague, Neth
Duration: 12 Sept 199915 Sept 1999

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