The performance of Si 0.2Ge 0.8/Si solar cell

Nji Raden Poespawati; Arief Udhiarto; Djoko Hartanto

The performance of Si _0.2Ge _0.8/Si solar cell

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Solar cell is optimized to convert solar radiation to electrical current with conversion efficiency as high as possible. Due to their superior performance compared to conventional silicon devices we used the Si _xGe _1-x strained layer for increasing the efficiency of solar cell device. By using simulation's tools, i.e. pcld version 5.6, we investigate and analysis the performance of Si _0.2G _0.8/Si solar cell, especially open circuit voltage, short circuit current, fill factor which will afTect the efficiency of the device. We also compare it with conventional silicon solar cell in order to examine their performances and the thickness of both device structures. The Si _xGe _1-x strained layer we applied contents 80% germanium. Results show that by inserting Si _0.2Ge _0.8 strained layer in device structure open circuit voltage and short circuit current has been optimal and the thickness of the device compared to conventional silicon solar cell is 1/17 times.

Original language	English
Title of host publication	ICSE 2002 - 2002 IEEE International Conference on Semiconductor Electronics, Proceedings
Pages	279-281
Number of pages	3
Publication status	Published - 2002
Event	2002 5th IEEE International Conference on Semiconductor Electronics, ICSE 2002 - Penang, Malaysia Duration: 19 Dec 2002 → 21 Dec 2002

Publication series

Name	IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Conference

Conference	2002 5th IEEE International Conference on Semiconductor Electronics, ICSE 2002
Country/Territory	Malaysia
City	Penang
Period	19/12/02 → 21/12/02

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Cite this

@inproceedings{a9023697659e418ca6361bf778c4f0cc,

title = "The performance of Si 0.2Ge 0.8/Si solar cell",

abstract = "Solar cell is optimized to convert solar radiation to electrical current with conversion efficiency as high as possible. Due to their superior performance compared to conventional silicon devices we used the Si xGe 1-x strained layer for increasing the efficiency of solar cell device. By using simulation's tools, i.e. pcld version 5.6, we investigate and analysis the performance of Si 0.2G 0.8/Si solar cell, especially open circuit voltage, short circuit current, fill factor which will afTect the efficiency of the device. We also compare it with conventional silicon solar cell in order to examine their performances and the thickness of both device structures. The Si xGe 1-x strained layer we applied contents 80\% germanium. Results show that by inserting Si 0.2Ge 0.8 strained layer in device structure open circuit voltage and short circuit current has been optimal and the thickness of the device compared to conventional silicon solar cell is 1/17 times.",

author = "Poespawati, \{Nji Raden\} and Arief Udhiarto and Djoko Hartanto",

year = "2002",

language = "English",

isbn = "0780375785",

series = "IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE",

pages = "279--281",

booktitle = "ICSE 2002 - 2002 IEEE International Conference on Semiconductor Electronics, Proceedings",

note = "2002 5th IEEE International Conference on Semiconductor Electronics, ICSE 2002 ; Conference date: 19-12-2002 Through 21-12-2002",

}

Poespawati, NR , Udhiarto, A & Hartanto, D 2002, The performance of Si _0.2Ge _0.8/Si solar cell. in ICSE 2002 - 2002 IEEE International Conference on Semiconductor Electronics, Proceedings., 1217825, IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE, pp. 279-281, 2002 5th IEEE International Conference on Semiconductor Electronics, ICSE 2002, Penang, Malaysia, 19/12/02.

The performance of Si _0.2Ge _0.8/Si solar cell. / Poespawati, Nji Raden ; Udhiarto, Arief; Hartanto, Djoko.
ICSE 2002 - 2002 IEEE International Conference on Semiconductor Electronics, Proceedings. 2002. p. 279-281 1217825 (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - The performance of Si 0.2Ge 0.8/Si solar cell

AU - Poespawati, Nji Raden

AU - Udhiarto, Arief

AU - Hartanto, Djoko

PY - 2002

Y1 - 2002

N2 - Solar cell is optimized to convert solar radiation to electrical current with conversion efficiency as high as possible. Due to their superior performance compared to conventional silicon devices we used the Si xGe 1-x strained layer for increasing the efficiency of solar cell device. By using simulation's tools, i.e. pcld version 5.6, we investigate and analysis the performance of Si 0.2G 0.8/Si solar cell, especially open circuit voltage, short circuit current, fill factor which will afTect the efficiency of the device. We also compare it with conventional silicon solar cell in order to examine their performances and the thickness of both device structures. The Si xGe 1-x strained layer we applied contents 80% germanium. Results show that by inserting Si 0.2Ge 0.8 strained layer in device structure open circuit voltage and short circuit current has been optimal and the thickness of the device compared to conventional silicon solar cell is 1/17 times.

AB - Solar cell is optimized to convert solar radiation to electrical current with conversion efficiency as high as possible. Due to their superior performance compared to conventional silicon devices we used the Si xGe 1-x strained layer for increasing the efficiency of solar cell device. By using simulation's tools, i.e. pcld version 5.6, we investigate and analysis the performance of Si 0.2G 0.8/Si solar cell, especially open circuit voltage, short circuit current, fill factor which will afTect the efficiency of the device. We also compare it with conventional silicon solar cell in order to examine their performances and the thickness of both device structures. The Si xGe 1-x strained layer we applied contents 80% germanium. Results show that by inserting Si 0.2Ge 0.8 strained layer in device structure open circuit voltage and short circuit current has been optimal and the thickness of the device compared to conventional silicon solar cell is 1/17 times.

UR - https://www.scopus.com/pages/publications/84864712707

M3 - Conference contribution

AN - SCOPUS:84864712707

SN - 0780375785

SN - 9780780375789

T3 - IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

SP - 279

EP - 281

BT - ICSE 2002 - 2002 IEEE International Conference on Semiconductor Electronics, Proceedings

T2 - 2002 5th IEEE International Conference on Semiconductor Electronics, ICSE 2002

Y2 - 19 December 2002 through 21 December 2002

ER -