The performance of Si _0.2Ge _0.8/Si solar cell

Solar cell is optimized to convert solar radiation to electrical current with conversion efficiency as high as possible. Due to their superior performance compared to conventional silicon devices we used the Si _xGe _1-x strained layer for increasing the efficiency of solar cell device. By using simulation's tools, i.e. pcld version 5.6, we investigate and analysis the performance of Si _0.2G _0.8/Si solar cell, especially open circuit voltage, short circuit current, fill factor which will afTect the efficiency of the device. We also compare it with conventional silicon solar cell in order to examine their performances and the thickness of both device structures. The Si _xGe _1-x strained layer we applied contents 80% germanium. Results show that by inserting Si _0.2Ge _0.8 strained layer in device structure open circuit voltage and short circuit current has been optimal and the thickness of the device compared to conventional silicon solar cell is 1/17 times.