The influence of Fermi energy on structural and electrical properties of laser crystallized P-doped amorphous silicon

Rosari Saleh, Norbert H. Nickel

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

A series of phosphorous-doped hydrogenated amorphous silicon films (a-Si:H) were crystallized using step-by-step laser crystallization process. The structural changes during the sequential crystallization process were detected by Raman measurements. The dehydrogenation was monitored by measuring the Si-H local vibrational modes using Raman spectroscopy and hydrogen effusion measurements. Interestingly, hydrogen bonding is affected by doping of the amorphous material. The influence of doping concentrations, thus the Fermi energy on electronic properties has been investigated employing secondary ion mass spectroscopy (SIMS), dark-conductivity- and Hall-effect measurements. The results from hydrogen effusion are consistent with the results obtained from Raman spectroscopy, Hall-effect- and dark-conductivity measurements.

Original languageEnglish
Pages (from-to)3324-3330
Number of pages7
JournalApplied Surface Science
Volume254
Issue number11
DOIs
Publication statusPublished - 30 Mar 2008

Keywords

  • H bonding
  • Laser crystallization
  • P-doped polycrystalline silicon
  • Structural and transport properties

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