The influence of Fermi energy on structural and electrical properties of laser crystallized P-doped amorphous silicon

Rosari Saleh; Norbert H. Nickel

doi:10.1016/j.apsusc.2007.11.011

The influence of Fermi energy on structural and electrical properties of laser crystallized P-doped amorphous silicon

Rosari Saleh, Norbert H. Nickel

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A series of phosphorous-doped hydrogenated amorphous silicon films (a-Si:H) were crystallized using step-by-step laser crystallization process. The structural changes during the sequential crystallization process were detected by Raman measurements. The dehydrogenation was monitored by measuring the Si-H local vibrational modes using Raman spectroscopy and hydrogen effusion measurements. Interestingly, hydrogen bonding is affected by doping of the amorphous material. The influence of doping concentrations, thus the Fermi energy on electronic properties has been investigated employing secondary ion mass spectroscopy (SIMS), dark-conductivity- and Hall-effect measurements. The results from hydrogen effusion are consistent with the results obtained from Raman spectroscopy, Hall-effect- and dark-conductivity measurements.

Original language	English
Pages (from-to)	3324-3330
Number of pages	7
Journal	Applied Surface Science
Volume	254
Issue number	11
DOIs	https://doi.org/10.1016/j.apsusc.2007.11.011
Publication status	Published - 30 Mar 2008

Keywords

H bonding
Laser crystallization
P-doped polycrystalline silicon
Structural and transport properties

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10.1016/j.apsusc.2007.11.011

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title = "The influence of Fermi energy on structural and electrical properties of laser crystallized P-doped amorphous silicon",

abstract = "A series of phosphorous-doped hydrogenated amorphous silicon films (a-Si:H) were crystallized using step-by-step laser crystallization process. The structural changes during the sequential crystallization process were detected by Raman measurements. The dehydrogenation was monitored by measuring the Si-H local vibrational modes using Raman spectroscopy and hydrogen effusion measurements. Interestingly, hydrogen bonding is affected by doping of the amorphous material. The influence of doping concentrations, thus the Fermi energy on electronic properties has been investigated employing secondary ion mass spectroscopy (SIMS), dark-conductivity- and Hall-effect measurements. The results from hydrogen effusion are consistent with the results obtained from Raman spectroscopy, Hall-effect- and dark-conductivity measurements.",

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T1 - The influence of Fermi energy on structural and electrical properties of laser crystallized P-doped amorphous silicon

AU - Saleh, Rosari

AU - Nickel, Norbert H.

PY - 2008/3/30

Y1 - 2008/3/30

N2 - A series of phosphorous-doped hydrogenated amorphous silicon films (a-Si:H) were crystallized using step-by-step laser crystallization process. The structural changes during the sequential crystallization process were detected by Raman measurements. The dehydrogenation was monitored by measuring the Si-H local vibrational modes using Raman spectroscopy and hydrogen effusion measurements. Interestingly, hydrogen bonding is affected by doping of the amorphous material. The influence of doping concentrations, thus the Fermi energy on electronic properties has been investigated employing secondary ion mass spectroscopy (SIMS), dark-conductivity- and Hall-effect measurements. The results from hydrogen effusion are consistent with the results obtained from Raman spectroscopy, Hall-effect- and dark-conductivity measurements.

AB - A series of phosphorous-doped hydrogenated amorphous silicon films (a-Si:H) were crystallized using step-by-step laser crystallization process. The structural changes during the sequential crystallization process were detected by Raman measurements. The dehydrogenation was monitored by measuring the Si-H local vibrational modes using Raman spectroscopy and hydrogen effusion measurements. Interestingly, hydrogen bonding is affected by doping of the amorphous material. The influence of doping concentrations, thus the Fermi energy on electronic properties has been investigated employing secondary ion mass spectroscopy (SIMS), dark-conductivity- and Hall-effect measurements. The results from hydrogen effusion are consistent with the results obtained from Raman spectroscopy, Hall-effect- and dark-conductivity measurements.

KW - H bonding

KW - Laser crystallization

KW - P-doped polycrystalline silicon

KW - Structural and transport properties

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DO - 10.1016/j.apsusc.2007.11.011

M3 - Article

AN - SCOPUS:39849109344

SN - 0169-4332

VL - 254

SP - 3324

EP - 3330

JO - Applied Surface Science

JF - Applied Surface Science

IS - 11

ER -

The influence of Fermi energy on structural and electrical properties of laser crystallized P-doped amorphous silicon

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