The influence of boron concentrations on structural properties in disorder silicon films

Rosari Saleh, N. H. Nickel

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

In this work we present a detailed structural of a series of B-doped hydrogenated microcrystalline silicon (μc-Si:H) films deposited by plasma-enhanced chemical vapor deposition (PECVD) and B-doped polycrystalline silicon (poly-Si) films produced by step-by-step laser crystallization process from amorphous silicon. The influence of doping on the structural properties and structural changes during the sequential crystallization processes were monitored by Raman spectroscopy. Unlike μc-Si:H films, that consist of a two-phase mixture of amorphous and ordered Si, partially crystallized sample shows a stratified structure with polycrystalline silicon layer at the top of an amorphous layer. With increasing doping concentration the LO-TO phonon line in poly-Si shift to smaller wave numbers and broadens asymmetrically. The results are discussed in terms of resonant interaction between optical phonons and direct intraband transitions known as a Fano resonance. In μc-Si:H films, on the other hand, the Fano effect is not observed. The increase of doping in μc-Si:H films suppressed the crystalline volume fraction, which leads to an amorphization in the film structure. The structural variation in both μc-Si:H and poly-Si films leads to a change in hydrogen bonding configuration.

Original languageEnglish
Pages (from-to)580-585
Number of pages6
JournalApplied Surface Science
Volume254
Issue number2
DOIs
Publication statusPublished - 15 Nov 2007

Keywords

  • Doped microcrystalline and polycrystalline silicon
  • Hydrogen bonding
  • Laser crystallization
  • Raman spectroscopy

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