TY - GEN
T1 - The effect of waveguide parameters on gan based S-bend Y-junction optical power divider
AU - Purnamaningsih, Retno Wigajatri
AU - Poespawati, Nji Raden
AU - Abuzairi, Tomy
AU - Rahardjo, Sasono
AU - Hamidah, Maratul
AU - Dogheche, Elhadj
N1 - Publisher Copyright:
© 2017 IEEE.
PY - 2017/12/5
Y1 - 2017/12/5
N2 - GaN-based structures have attracted many researchers in developing photonic devices. These semiconductor structures can operate at high temperatures and high-power levels due to their mechanical hardness. So far, optical splitters design based on Y-junction splitters are widely used on the various material structure. The problem of these structures is radiation loss at the junction area. In this paper, we study the effect of various waveguide parameters on GaN-based S-bend Y-junction optical power divider. The design consists of three sections: linear rectangular rib waveguide, parabolic taper and two S-bend sine branches with the total length of 1000μm. We use optical beam propagation methods (BPM) to obtain the characteristic of the guided wave to calculate the field propagation through the structure as a function of waveguide parameters, such as branching angle and input wavelength. All simulations are carried out using the OptiBPM software. From the simulation results, it shows that to maintain 90% transmitted power, the branching angle for the design should be at the range of 0.5-1.5°. It is also demonstrated that the transmitted power almost stable through the wavelength range from 1.5 up to 1.6 μm with an average of power loss at about 0.35 dB. The simulation results presented can be applied for future GaN Y-junction based waveguide photonic devices design.
AB - GaN-based structures have attracted many researchers in developing photonic devices. These semiconductor structures can operate at high temperatures and high-power levels due to their mechanical hardness. So far, optical splitters design based on Y-junction splitters are widely used on the various material structure. The problem of these structures is radiation loss at the junction area. In this paper, we study the effect of various waveguide parameters on GaN-based S-bend Y-junction optical power divider. The design consists of three sections: linear rectangular rib waveguide, parabolic taper and two S-bend sine branches with the total length of 1000μm. We use optical beam propagation methods (BPM) to obtain the characteristic of the guided wave to calculate the field propagation through the structure as a function of waveguide parameters, such as branching angle and input wavelength. All simulations are carried out using the OptiBPM software. From the simulation results, it shows that to maintain 90% transmitted power, the branching angle for the design should be at the range of 0.5-1.5°. It is also demonstrated that the transmitted power almost stable through the wavelength range from 1.5 up to 1.6 μm with an average of power loss at about 0.35 dB. The simulation results presented can be applied for future GaN Y-junction based waveguide photonic devices design.
KW - BPM
KW - GaN-based structure
KW - Optical power divider
KW - S-bend
KW - Y-junction
UR - http://www.scopus.com/inward/record.url?scp=85045929108&partnerID=8YFLogxK
U2 - 10.1109/QIR.2017.8168510
DO - 10.1109/QIR.2017.8168510
M3 - Conference contribution
AN - SCOPUS:85045929108
T3 - QiR 2017 - 2017 15th International Conference on Quality in Research (QiR): International Symposium on Electrical and Computer Engineering
SP - 353
EP - 356
BT - QiR 2017 - 2017 15th International Conference on Quality in Research (QiR)
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 15th International Conference on Quality in Research: International Symposium on Electrical and Computer Engineering, QiR 2017
Y2 - 24 July 2017 through 27 July 2017
ER -