The diffusion of hydrogen and inert gas in sputtered a-SiC:H alloys: Microstructure study

Rosari Saleh, Lusitra Munisa, Wolfhard Beyer

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The microstructure of DC sputtered amorphous silicon carbon (a-SiC:H) is studied by effusion measurements of hydrogen and of implanted inert gases helium, neon, argon and secondary ion mass spectrometry. The results suggest that the motion of inert gas atoms is controlled by the diffusion, greatly depending on a broadening of network openings. Already at carbon concentrations of 25 at%, isolated voids disappeared presumably because interconnected voids are formed. A void formation is mainly attributed to an increase in hydrogen incorporation in the samples.

Original languageEnglish
Pages (from-to)3449-3455
Number of pages7
JournalSolar Energy Materials and Solar Cells
Volume90
Issue number18-19
DOIs
Publication statusPublished - 23 Nov 2006

Keywords

  • Amorphous films
  • Hydrogen effusion
  • SIMS
  • Sputtering

Fingerprint

Dive into the research topics of 'The diffusion of hydrogen and inert gas in sputtered a-SiC:H alloys: Microstructure study'. Together they form a unique fingerprint.

Cite this