The diffusion of hydrogen and inert gas in sputtered a-SiC:H alloys: Microstructure study

Rosari Saleh; Lusitra Munisa; Wolfhard Beyer

doi:10.1016/j.solmat.2006.04.013

The diffusion of hydrogen and inert gas in sputtered a-SiC:H alloys: Microstructure study

Rosari Saleh, Lusitra Munisa, Wolfhard Beyer

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The microstructure of DC sputtered amorphous silicon carbon (a-SiC:H) is studied by effusion measurements of hydrogen and of implanted inert gases helium, neon, argon and secondary ion mass spectrometry. The results suggest that the motion of inert gas atoms is controlled by the diffusion, greatly depending on a broadening of network openings. Already at carbon concentrations of 25 at%, isolated voids disappeared presumably because interconnected voids are formed. A void formation is mainly attributed to an increase in hydrogen incorporation in the samples.

Original language	English
Pages (from-to)	3449-3455
Number of pages	7
Journal	Solar Energy Materials and Solar Cells
Volume	90
Issue number	18-19
DOIs	https://doi.org/10.1016/j.solmat.2006.04.013
Publication status	Published - 23 Nov 2006

Keywords

Amorphous films
Hydrogen effusion
SIMS
Sputtering

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10.1016/j.solmat.2006.04.013

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title = "The diffusion of hydrogen and inert gas in sputtered a-SiC:H alloys: Microstructure study",

abstract = "The microstructure of DC sputtered amorphous silicon carbon (a-SiC:H) is studied by effusion measurements of hydrogen and of implanted inert gases helium, neon, argon and secondary ion mass spectrometry. The results suggest that the motion of inert gas atoms is controlled by the diffusion, greatly depending on a broadening of network openings. Already at carbon concentrations of 25 at%, isolated voids disappeared presumably because interconnected voids are formed. A void formation is mainly attributed to an increase in hydrogen incorporation in the samples.",

keywords = "Amorphous films, Hydrogen effusion, SIMS, Sputtering",

author = "Rosari Saleh and Lusitra Munisa and Wolfhard Beyer",

note = "Funding Information: The authors thank M. Gebauer, A. Dahmen and W. Michelsen for the ion implantations. This work was supported in part by funds of bilateral collaboration programs of the International Bureau of BMBF (Germany) with Universitas Indonesia (Indonesia). R.S. and L.M. acknowledge financial support by University Research Graduate Education Project (URGE Project) under Contract 005/HTPP-III/URGE/1997 (Indonesia). ",

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doi = "10.1016/j.solmat.2006.04.013",

language = "English",

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T1 - The diffusion of hydrogen and inert gas in sputtered a-SiC:H alloys

T2 - Microstructure study

AU - Saleh, Rosari

AU - Munisa, Lusitra

AU - Beyer, Wolfhard

N1 - Funding Information: The authors thank M. Gebauer, A. Dahmen and W. Michelsen for the ion implantations. This work was supported in part by funds of bilateral collaboration programs of the International Bureau of BMBF (Germany) with Universitas Indonesia (Indonesia). R.S. and L.M. acknowledge financial support by University Research Graduate Education Project (URGE Project) under Contract 005/HTPP-III/URGE/1997 (Indonesia).

PY - 2006/11/23

Y1 - 2006/11/23

N2 - The microstructure of DC sputtered amorphous silicon carbon (a-SiC:H) is studied by effusion measurements of hydrogen and of implanted inert gases helium, neon, argon and secondary ion mass spectrometry. The results suggest that the motion of inert gas atoms is controlled by the diffusion, greatly depending on a broadening of network openings. Already at carbon concentrations of 25 at%, isolated voids disappeared presumably because interconnected voids are formed. A void formation is mainly attributed to an increase in hydrogen incorporation in the samples.

AB - The microstructure of DC sputtered amorphous silicon carbon (a-SiC:H) is studied by effusion measurements of hydrogen and of implanted inert gases helium, neon, argon and secondary ion mass spectrometry. The results suggest that the motion of inert gas atoms is controlled by the diffusion, greatly depending on a broadening of network openings. Already at carbon concentrations of 25 at%, isolated voids disappeared presumably because interconnected voids are formed. A void formation is mainly attributed to an increase in hydrogen incorporation in the samples.

KW - Amorphous films

KW - Hydrogen effusion

KW - SIMS

KW - Sputtering

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U2 - 10.1016/j.solmat.2006.04.013

DO - 10.1016/j.solmat.2006.04.013

M3 - Article

AN - SCOPUS:33748463605

VL - 90

SP - 3449

EP - 3455

JO - Solar Cells

JF - Solar Cells

SN - 0927-0248

IS - 18-19

ER -

The diffusion of hydrogen and inert gas in sputtered a-SiC:H alloys: Microstructure study

Abstract

Keywords

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