Synthesis and characteristic of Cu₂ZnSnS₄ thin film prepared by appropriate non-stoichiometry precursor

Keyphrases

• Cu2ZnSnS4 Thin Films 100%
• Nonstoichiometry 100%
• Ethanol 66%
• Chloride 33%
• XRD Characterization 33%
• Porosity 33%
• SEM Micrographs 33%
• High Concentration 33%
• Holding Time 33%
• Heat Treatment 33%
• Sulfur Compounds 33%
• Semiconductors 33%
• Porous Morphology 33%
• Crystallinity 33%
• Photon Energy 33%
• Annealing Treatment 33%
• Growth Process 33%
• CZTS Films 33%
• Energy Band 33%
• Kesterite Cu2ZnSnS4 33%
• Sulfur 33%
• Gradient Lines 33%
• Cu-Sn 33%
• Surface Film 33%
• Process Heat 33%
• Band Characteristics 33%
• Capping Ligands 33%

Engineering

• Thin Films 100%
• Nonstoichiometry 100%
• Porosity 33%
• Micrograph 33%
• Heat Treatment 33%
• Holding Time 33%
• Mols 33%
• Crystallinity 33%
• Photon Energy 33%
• Growth Process 33%
• Energy Band 33%
• Surface Film 33%
• Process Heat 33%
• Secondary Phase 33%

Material Science

• Thin Films 100%
• Film 100%
• X-Ray Diffraction 33%
• Scanning Electron Microscopy 33%
• Heat Treatment 33%
• Annealing 33%