We have developed Barium Strontium Tinanate (BST) doped by Indium as soft dopant on Pt/Si substrate using chemical solution deposition method followed by spin coating. The specimen is then examined by XRF to identify the chemical content, SEM to study the morphology of the films, XRD to calculate the grain size, and electrometer Keithley 6517A to obtain the hysteresis curves. We found that there are no crack for all the films. Sherrer method in XRD analysis shows that the grain size for pure BST is 22 nm, while grain size for BST doped by 1%, 2% and 4% In are respectively 24, 25 and 27 nm. From hysteresis curves analysis, both BST and BST doped Indium films are ferroelectric. These results show that BST doped by Indium can be developed as ferroelectric solar cell.