Structural properties of phosphorous-doped polycrystalline silicon

Rosari Saleh; N. H. Nickel

doi:10.1016/j.solmat.2005.10.026

Structural properties of phosphorous-doped polycrystalline silicon

Rosari Saleh, N. H. Nickel

Department of Physics

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The structural properties and hydrogen bonding of undoped and phosphorous doped polycrystalline silicon produced by step-by-step laser dehydrogenation and crystallization technique were investigated using Raman spectroscopy and hydrogen effusion measurements. At low laser fluences, E _L, a two-layer system is created. This is accompanied by the change in hydrogen bonding. The intensity of the Si-H vibration mode at 2000 decreases faster than the one at 2100 cm ^-1. This is even more pronounced in phosphorous-doped specimens. The laser crystallization results in an increase of the hydrogen binding energy by approximately 0.2-0.3 eV compared to the amorphous starting materials.

Original language	English
Pages (from-to)	3456-3463
Number of pages	8
Journal	Solar Energy Materials and Solar Cells
Volume	90
Issue number	18-19
DOIs	https://doi.org/10.1016/j.solmat.2005.10.026
Publication status	Published - 23 Nov 2006

Keywords

Hydrogen bonding
Laser crystallization
Polycrystalline silicon
Raman spectroscopy

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10.1016/j.solmat.2005.10.026

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title = "Structural properties of phosphorous-doped polycrystalline silicon",

abstract = "The structural properties and hydrogen bonding of undoped and phosphorous doped polycrystalline silicon produced by step-by-step laser dehydrogenation and crystallization technique were investigated using Raman spectroscopy and hydrogen effusion measurements. At low laser fluences, E L, a two-layer system is created. This is accompanied by the change in hydrogen bonding. The intensity of the Si-H vibration mode at 2000 decreases faster than the one at 2100 cm -1. This is even more pronounced in phosphorous-doped specimens. The laser crystallization results in an increase of the hydrogen binding energy by approximately 0.2-0.3 eV compared to the amorphous starting materials.",

keywords = "Hydrogen bonding, Laser crystallization, Polycrystalline silicon, Raman spectroscopy",

author = "Rosari Saleh and Nickel, {N. H.}",

year = "2006",

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doi = "10.1016/j.solmat.2005.10.026",

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AU - Saleh, Rosari

AU - Nickel, N. H.

PY - 2006/11/23

Y1 - 2006/11/23

N2 - The structural properties and hydrogen bonding of undoped and phosphorous doped polycrystalline silicon produced by step-by-step laser dehydrogenation and crystallization technique were investigated using Raman spectroscopy and hydrogen effusion measurements. At low laser fluences, E L, a two-layer system is created. This is accompanied by the change in hydrogen bonding. The intensity of the Si-H vibration mode at 2000 decreases faster than the one at 2100 cm -1. This is even more pronounced in phosphorous-doped specimens. The laser crystallization results in an increase of the hydrogen binding energy by approximately 0.2-0.3 eV compared to the amorphous starting materials.

AB - The structural properties and hydrogen bonding of undoped and phosphorous doped polycrystalline silicon produced by step-by-step laser dehydrogenation and crystallization technique were investigated using Raman spectroscopy and hydrogen effusion measurements. At low laser fluences, E L, a two-layer system is created. This is accompanied by the change in hydrogen bonding. The intensity of the Si-H vibration mode at 2000 decreases faster than the one at 2100 cm -1. This is even more pronounced in phosphorous-doped specimens. The laser crystallization results in an increase of the hydrogen binding energy by approximately 0.2-0.3 eV compared to the amorphous starting materials.

KW - Hydrogen bonding

KW - Laser crystallization

KW - Polycrystalline silicon

KW - Raman spectroscopy

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DO - 10.1016/j.solmat.2005.10.026

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EP - 3463

JO - Solar Cells

JF - Solar Cells

SN - 0927-0248

IS - 18-19

ER -

Structural properties of phosphorous-doped polycrystalline silicon

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