Structural properties of phosphorous-doped polycrystalline silicon

Rosari Saleh, N. H. Nickel

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

The structural properties and hydrogen bonding of undoped and phosphorous doped polycrystalline silicon produced by step-by-step laser dehydrogenation and crystallization technique were investigated using Raman spectroscopy and hydrogen effusion measurements. At low laser fluences, E L, a two-layer system is created. This is accompanied by the change in hydrogen bonding. The intensity of the Si-H vibration mode at 2000 decreases faster than the one at 2100 cm -1. This is even more pronounced in phosphorous-doped specimens. The laser crystallization results in an increase of the hydrogen binding energy by approximately 0.2-0.3 eV compared to the amorphous starting materials.

Original languageEnglish
Pages (from-to)3456-3463
Number of pages8
JournalSolar Energy Materials and Solar Cells
Volume90
Issue number18-19
DOIs
Publication statusPublished - 23 Nov 2006

Keywords

  • Hydrogen bonding
  • Laser crystallization
  • Polycrystalline silicon
  • Raman spectroscopy

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