Abstract
The structural properties and hydrogen bonding of undoped and phosphorous doped polycrystalline silicon produced by step-by-step laser dehydrogenation and crystallization technique were investigated using Raman spectroscopy and hydrogen effusion measurements. At low laser fluences, EL, a two-layer system is created. This is accompanied by the change in hydrogen bonding. The intensity of the Si-H vibration mode at 2000 decreases faster than the one at 2100 cm-1. This is even more pronounced in phosphorous-doped specimens. The laser crystallization results in an increase of the hydrogen binding energy by approximately 0.2-0.3 eV compared to the amorphous starting materials.
Original language | English |
---|---|
Pages (from-to) | 3456-3463 |
Number of pages | 8 |
Journal | Solar Energy Materials and Solar Cells |
Volume | 90 |
Issue number | 18-19 |
DOIs | |
Publication status | Published - 23 Nov 2006 |
Keywords
- Hydrogen bonding
- Laser crystallization
- Polycrystalline silicon
- Raman spectroscopy