Structural and gas-sensing properties of V2O5-MoO3 thin films for H2 detection

Cuk Imawan, H. Steffes, F. Solzbacher, E. Obermeier

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71 Citations (Scopus)


Structural and gas-sensing properties of the modified MoO3 thin films using a V2O5-overlayer have been investigated. The thin films were deposited by magnetron rf sputtering. The crystallite size of the V2O5-MoO3 thin films is significantly smaller than the pure MoO3 thin films. The electrical resistivity of the films could be drastically reduced. It is found that the H2-sensing properties of the rf sputtered MoO3 thin films can be improved markedly by addition of a V2O5-overlayer. The sensitivity of the sensor is strongly influenced by the thickness of the sputtered V-overlayers. The optimum operating temperature when considering the response time, recovery time and the sensitivity was found at 150°C. Very low cross-sensitivity could be observed towards NO2, NH3, CO, CH4 and SO2 gases. The 50% response (τ50) and the recovery time are about 20s and 1min, respectively. These results suggest V2O5-MoO3 thin films to be an excellent material for a low temperature, highly sensitive and selective H2 sensor.

Original languageEnglish
Pages (from-to)346-351
Number of pages6
JournalSensors and Actuators, B: Chemical
Issue number1-2
Publication statusPublished - 15 Jun 2001


  • H gas sensors
  • Metal oxides
  • MoO thin films
  • VO-overlayer

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