Structural and electrical characterization of B-doped microcrystalline silicon thin films

Rosari Saleh, N. H. Nickel

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

In this paper we present the results for boron-doped microcrystalline silicon deposited at low temperature (230°C) by PECVD method. The structural and electrical properties are investigated as a function of boron concentrations using Raman, dark conductivity, hydrogen effusion and Hall effect measurements. The results show that the incorporation of boron induced an amorphization in the μc-Si:H films structure. A structural change due to boron incorporation is also accompanied by a change in hydrogen bonding environment. High conductive film of our boron-doped μc-Si:H films is attained at boron concentration 2000 ppm which consists nearly the same fraction of crystalline and amorphous phase (Xc ∼55%).

Original languageEnglish
Pages (from-to)327-332
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume715
Publication statusPublished - 1 Dec 2002
EventAmorphous and Heterogeneous Silicon Films 2002 - San Francisco, CA, United States
Duration: 2 Apr 20025 Apr 2002

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