Structural and electrical characterization of B-doped microcrystalline silicon thin films

Rosari Saleh; N. H. Nickel

doi:10.1557/proc-715-a20.6

Structural and electrical characterization of B-doped microcrystalline silicon thin films

Rosari Saleh, N. H. Nickel

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

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Abstract

In this paper we present the results for boron-doped microcrystalline silicon deposited at low temperature (230°C) by PECVD method. The structural and electrical properties are investigated as a function of boron concentrations using Raman, dark conductivity, hydrogen effusion and Hall effect measurements. The results show that the incorporation of boron induced an amorphization in the μc-Si:H films structure. A structural change due to boron incorporation is also accompanied by a change in hydrogen bonding environment. High conductive film of our boron-doped μc-Si:H films is attained at boron concentration 2000 ppm which consists nearly the same fraction of crystalline and amorphous phase (X_c ∼55%).

Original language	English
Pages (from-to)	327-332
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	715
DOIs	https://doi.org/10.1557/proc-715-a20.6
Publication status	Published - 2002
Event	Amorphous and Heterogeneous Silicon Films 2002 - San Francisco, CA, United States Duration: 2 Apr 2002 → 5 Apr 2002

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title = "Structural and electrical characterization of B-doped microcrystalline silicon thin films",

abstract = "In this paper we present the results for boron-doped microcrystalline silicon deposited at low temperature (230°C) by PECVD method. The structural and electrical properties are investigated as a function of boron concentrations using Raman, dark conductivity, hydrogen effusion and Hall effect measurements. The results show that the incorporation of boron induced an amorphization in the μc-Si:H films structure. A structural change due to boron incorporation is also accompanied by a change in hydrogen bonding environment. High conductive film of our boron-doped μc-Si:H films is attained at boron concentration 2000 ppm which consists nearly the same fraction of crystalline and amorphous phase (Xc ∼55%).",

author = "Rosari Saleh and Nickel, {N. H.}",

year = "2002",

doi = "10.1557/proc-715-a20.6",

language = "English",

volume = "715",

pages = "327--332",

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note = "Amorphous and Heterogeneous Silicon Films 2002 ; Conference date: 02-04-2002 Through 05-04-2002",

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TY - JOUR

T1 - Structural and electrical characterization of B-doped microcrystalline silicon thin films

AU - Saleh, Rosari

AU - Nickel, N. H.

PY - 2002

Y1 - 2002

N2 - In this paper we present the results for boron-doped microcrystalline silicon deposited at low temperature (230°C) by PECVD method. The structural and electrical properties are investigated as a function of boron concentrations using Raman, dark conductivity, hydrogen effusion and Hall effect measurements. The results show that the incorporation of boron induced an amorphization in the μc-Si:H films structure. A structural change due to boron incorporation is also accompanied by a change in hydrogen bonding environment. High conductive film of our boron-doped μc-Si:H films is attained at boron concentration 2000 ppm which consists nearly the same fraction of crystalline and amorphous phase (Xc ∼55%).

AB - In this paper we present the results for boron-doped microcrystalline silicon deposited at low temperature (230°C) by PECVD method. The structural and electrical properties are investigated as a function of boron concentrations using Raman, dark conductivity, hydrogen effusion and Hall effect measurements. The results show that the incorporation of boron induced an amorphization in the μc-Si:H films structure. A structural change due to boron incorporation is also accompanied by a change in hydrogen bonding environment. High conductive film of our boron-doped μc-Si:H films is attained at boron concentration 2000 ppm which consists nearly the same fraction of crystalline and amorphous phase (Xc ∼55%).

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U2 - 10.1557/proc-715-a20.6

DO - 10.1557/proc-715-a20.6

M3 - Conference article

AN - SCOPUS:0036920159

SN - 0272-9172

VL - 715

SP - 327

EP - 332

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Amorphous and Heterogeneous Silicon Films 2002

Y2 - 2 April 2002 through 5 April 2002

ER -

Structural and electrical characterization of B-doped microcrystalline silicon thin films

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