In this paper we present the results for boron-doped microcrystalline silicon deposited at low temperature (230°C) by PECVD method. The structural and electrical properties are investigated as a function of boron concentrations using Raman, dark conductivity, hydrogen effusion and Hall effect measurements. The results show that the incorporation of boron induced an amorphization in the μc-Si:H films structure. A structural change due to boron incorporation is also accompanied by a change in hydrogen bonding environment. High conductive film of our boron-doped μc-Si:H films is attained at boron concentration 2000 ppm which consists nearly the same fraction of crystalline and amorphous phase (Xc ∼55%).
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|Publication status||Published - 1 Dec 2002|
|Event||Amorphous and Heterogeneous Silicon Films 2002 - San Francisco, CA, United States|
Duration: 2 Apr 2002 → 5 Apr 2002