Perovskite material has extensively investigated in several years due to its ability as solar cell active layer. However, stability of perovskite solar cell is still a challenge for mass production and commercialization. Transport layer is one of concern to overcome the stability problem. Inorganic material such as CuSCN can be use as p-Type transport layer and more robust from degradation compared to organic transport layer. Furthermore, CuSCN has excellent transparency, low-cost and simple fabrication, and high hole mobility. In this research, we use CuSCN as hole transport layer and deposited it using spin coating method. Optimized CuSCN layer was obtained by varied spin coating rotational speed. Afterwards, the completed devices were studied its stability. The result is, performance of optimized solar cell was degraded about 50% from its initial measurement after 14 days.