Spin-Topological Electronic Valve in Ni/hBN–Graphene–hBN/Ni Magnetic Junction

Yusuf Wicaksono, Halimah Harfah, Gagus Ketut Sunnardianto, Muhammad Aziz Majidi, Koichi Kusakabe

Research output: Contribution to journalArticlepeer-review


A spin-topological electronic valve was discovered in a Ni/hBN–graphene–hBN/Ni magnetic junction to control the in-plane conductance of graphene. By manipulating the mass-gapped Dirac cone (MGDC) of graphene’s topology using the magnetic proximity effect, the spin-topological electronic valve was made possible. The first-principles investigation was conducted to show how the mechanism of graphene’s MGDC is controlled. Twelve stacking configurations for the anti-parallel configuration (APC) and parallel configuration (PC) of the magnetic alignment of Ni slabs were calculated using spin-polarized density functional theory. Three groups can be made based on the relative total energy of the 12 stacking configurations, which corresponds to a van der Waals interaction between hBN and graphene. Each group exhibits distinctive features of graphene’s MGDC. The configuration of the Ni(111) surface state’s interaction with graphene as an evanescent wave significantly impacts how the MGDC behaves. By utilizing the special properties of graphene’s MGDC, which depend on the stacking configuration, a controllable MGDC using mechanical motion was proposed by suggesting a device that can translate the top and bottom Ni(111)/hBN slabs. By changing the stacking configuration from Group I to II and II to III, three different in-plane conductances of graphene were observed, corresponding to three non-volatile memory states. This device provides insight into MJs having three or more non-volatile memory states that cannot be found in conventional MJs.

Original languageEnglish
Article number113
Issue number5
Publication statusPublished - May 2023


  • Dirac cone engineering
  • graphene
  • in-plane conductance
  • spintronic


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