Single step preparation of quaternary Cu2 ZnSnSe4 thin films by RF magnetron sputtering from binary chalcogenide targets

Rachmat Adhi Wibowo, Woo Seok Kim, Eun Soo Lee, Badrul Munir, Kyoo Ho Kim

Research output: Contribution to journalArticlepeer-review

148 Citations (Scopus)

Abstract

Cu2 ZnSnSe4 (CZTSe) thin films were grown in a single step procedure by RF magnetron sputtering from a compacted powder consisting of blended chalcogenides. Targets with various chalcogenide mole ratios were designed for the purpose of preparing stoichiometric as-grown films. The material concentrations of the films grown at room temperature were found to depend on the mole ratio of the chalcogenides in the targets. It was found that a significant deviation of material concentration of the films from ideal stoichiometry led to the formation of CuSe, ZnSe and SnSe secondary phases. CZTSe films with a stannite phase could be grown even at room temperature from the sputtering target containing Cu2 Se with corresponding growth orientations of (101), (112), (220/204), (312/116) and (332/316). The p-type CZTSe film grown at a substrate temperature of 150 {ring operator} C showed a high absorption coefficient of 104 cm- 1 with an optical band gap of 1.56 eV, resistivity as low as 1.482 Ω cm and carrier concentration of 1 × 1019 cm- 3. These results suggested that the control of the target compositions was crucial to grow single phase and stoichiometric quaternary CZTSe films.

Original languageEnglish
Pages (from-to)1908-1913
Number of pages6
JournalJournal of Physics and Chemistry of Solids
Volume68
Issue number10
DOIs
Publication statusPublished - 1 Oct 2007

Keywords

  • A. Chacogenides
  • A. Thin films
  • B. Vapor deposition
  • D. Optical properties

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