TY - JOUR
T1 - Single-photon detection by Si single-electron FETs
AU - Tabe, Michiharu
AU - Udhiarto, Arief
AU - Moraru, Daniel
AU - Mizuno, Takeshi
PY - 2011/3
Y1 - 2011/3
N2 - We have demonstrated that Si single-electron SOI-MOSFETs with multidots channel have attractive new functions such as single-photon detection. Multidots formed by nanoscale selective oxidation of thin SOI layer have been used for photon detection. Most recently, we have investigated photon detection capabilities of FETs having phosphorus (P)-doped channel. In such P-doped FETs, each P donor works as a quantum dot for electrons and single-electron transport is achieved by tunnelling through donor potentials. Using such P-doped FETs, single-photon detection has been demonstrated. Furthermore, in order to directly observe the spatial landscape of even a single-dopant potential, we have developed low-temperature-Kelvin probe force microscopy (LT-KFM) and succeeded in detecting a single-dopant potential in the channel region. In this paper, we present results of photon-induced random telegraph signals in crystalline-dot-type and donor-dot-type multidot single-electron SOI-MOSFETs, and direct observation of a single-dopant potential by LT-KFM.
AB - We have demonstrated that Si single-electron SOI-MOSFETs with multidots channel have attractive new functions such as single-photon detection. Multidots formed by nanoscale selective oxidation of thin SOI layer have been used for photon detection. Most recently, we have investigated photon detection capabilities of FETs having phosphorus (P)-doped channel. In such P-doped FETs, each P donor works as a quantum dot for electrons and single-electron transport is achieved by tunnelling through donor potentials. Using such P-doped FETs, single-photon detection has been demonstrated. Furthermore, in order to directly observe the spatial landscape of even a single-dopant potential, we have developed low-temperature-Kelvin probe force microscopy (LT-KFM) and succeeded in detecting a single-dopant potential in the channel region. In this paper, we present results of photon-induced random telegraph signals in crystalline-dot-type and donor-dot-type multidot single-electron SOI-MOSFETs, and direct observation of a single-dopant potential by LT-KFM.
KW - Coulomb blockade
KW - quantum dot
KW - single dopant
KW - single-photon detection
UR - http://www.scopus.com/inward/record.url?scp=79952522826&partnerID=8YFLogxK
U2 - 10.1002/pssa.201000385
DO - 10.1002/pssa.201000385
M3 - Article
AN - SCOPUS:79952522826
SN - 1862-6300
VL - 208
SP - 646
EP - 651
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 3
ER -