Silicon-hydrogen bonds in boron and phosphorous doped polycrystalline silicon thin films

Rosari Saleh, N. H. Nickel

Research output: Contribution to journalConference article

Abstract

Hydrogen bonding in laser crystallized boron and phosphorous doped polycrystalline silicon is investigated using Raman spectroscopy and hydrogen effusion measurements. During laser crystallization the intensity of the local vibration modes near 2000 and 2100 cm-1 decreases. The intensity of vibration mode at 2000 cm-1 decreases faster than the one at 2100 cm-1. From H effusion measurements, the hydrogen density-of-states (H DOS) distribution is derived. For undoped amorphous silicon the H DOS exhibits two prominent peaks at hydrogen binding energies of E*-μ H = -1.1 and -1.5 eV. In B doped a-Si:H the peak at -1.1 eV is less pronounced while in P doped a-Si:H the H binding energy increases by about 0.1 eV. In all samples laser crystallization causes an increase of the H binding energy by about 0.2 - 0.3 eV. However, the peaks in the H DOS observed in B-doped samples are preserved during laser crystallization.

Original languageEnglish
Pages (from-to)289-294
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume808
Publication statusPublished - 1 Dec 2004
EventAmorphous and Nanocrystalline Silicon Science and Technology - 2004 - San Francisco, CA, United States
Duration: 13 Apr 200416 Apr 2004

Fingerprint Dive into the research topics of 'Silicon-hydrogen bonds in boron and phosphorous doped polycrystalline silicon thin films'. Together they form a unique fingerprint.

Cite this