Hydrogen bonding in laser crystallized boron and phosphorous doped polycrystalline silicon is investigated using Raman spectroscopy and hydrogen effusion measurements. During laser crystallization the intensity of the local vibration modes near 2000 and 2100 cm-1 decreases. The intensity of vibration mode at 2000 cm-1 decreases faster than the one at 2100 cm-1. From H effusion measurements, the hydrogen density-of-states (H DOS) distribution is derived. For undoped amorphous silicon the H DOS exhibits two prominent peaks at hydrogen binding energies of E*-μ H = -1.1 and -1.5 eV. In B doped a-Si:H the peak at -1.1 eV is less pronounced while in P doped a-Si:H the H binding energy increases by about 0.1 eV. In all samples laser crystallization causes an increase of the H binding energy by about 0.2 - 0.3 eV. However, the peaks in the H DOS observed in B-doped samples are preserved during laser crystallization.
|Number of pages||6|
|Journal||Materials Research Society Symposium Proceedings|
|Publication status||Published - 2004|
|Event||Amorphous and Nanocrystalline Silicon Science and Technology - 2004 - San Francisco, CA, United States|
Duration: 13 Apr 2004 → 16 Apr 2004