TY - JOUR
T1 - SIFAT OPTIK PADA FABRIKASI POLIKRISTAL AgGaSe2
AU - Harsono, A.
AU - Janusetiawan, I Dewa Made
PY - 2004
Y1 - 2004
N2 - Polycristal AgGaSe2, is compound (I-III-VI2) a semiconductor as basic material for thin film for solar cell. Polycristal was succesfully grown using Bridgmann Method, heated on sequential temperature treatment until 850°C and cooled down slowly until room temperature. Results observed were in the form of ingot (bars) with more or less 3 cm length and 13 mm in diameter. By using X-Ray Fefraction, composition obtained of each element (weight %) was Ag = 29,3996 %, Ga = 36,8123 % and Se = 30,29 % while using X-Ray Difraction lattice parameter obtained/calculated a = 4,4112 Å, c = 8,8854 Å, and c/a = 2,01426.
AB - Polycristal AgGaSe2, is compound (I-III-VI2) a semiconductor as basic material for thin film for solar cell. Polycristal was succesfully grown using Bridgmann Method, heated on sequential temperature treatment until 850°C and cooled down slowly until room temperature. Results observed were in the form of ingot (bars) with more or less 3 cm length and 13 mm in diameter. By using X-Ray Fefraction, composition obtained of each element (weight %) was Ag = 29,3996 %, Ga = 36,8123 % and Se = 30,29 % while using X-Ray Difraction lattice parameter obtained/calculated a = 4,4112 Å, c = 8,8854 Å, and c/a = 2,01426.
UR - http://journal.ui.ac.id/technology/index.php/journal/article/view/263
U2 - 10.7454/mst.v8i3.263
DO - 10.7454/mst.v8i3.263
M3 - Article
SN - 1693-6698
VL - 8
JO - MAKARA Journal of Technology Series
JF - MAKARA Journal of Technology Series
IS - 3
ER -