TY - GEN
T1 - Si-based single-dopant atom devices
AU - Tabe, Michiharu
AU - Moraru, Daniel
AU - Udhiarto, Arief
AU - Miki, Sakito
AU - Anwar, Miftahul
AU - Kawai, Yuya
AU - Mizuno, Takeshi
PY - 2011
Y1 - 2011
N2 - We have recently proposed and demonstrated a new device concept, "Si-based single-dopant atom device", consisting of only one or a few dopant atoms in the channel of Si field-effect transistors. The device characteristics are determined by a dopant, which is mediating electron or hole transport between source and drain electrodes. In this paper, our recent results on electronic and photonic applications are introduced. Furthermore, single-dopant images obtained by a scanning probe microscope are also presented.
AB - We have recently proposed and demonstrated a new device concept, "Si-based single-dopant atom device", consisting of only one or a few dopant atoms in the channel of Si field-effect transistors. The device characteristics are determined by a dopant, which is mediating electron or hole transport between source and drain electrodes. In this paper, our recent results on electronic and photonic applications are introduced. Furthermore, single-dopant images obtained by a scanning probe microscope are also presented.
KW - Silicon
KW - Single-dopant
KW - Single-electron devices
UR - https://www.scopus.com/pages/publications/79955867605
U2 - 10.4028/www.scientific.net/AMR.222.205
DO - 10.4028/www.scientific.net/AMR.222.205
M3 - Conference contribution
AN - SCOPUS:79955867605
SN - 9783037850879
T3 - Advanced Materials Research
SP - 205
EP - 208
BT - Global Research and Education
T2 - 9th International Conference on Global Research and Education, INTER-ACADEMIA 2010
Y2 - 9 August 2010 through 12 August 2010
ER -