Si-based single-dopant atom devices

Michiharu Tabe, Daniel Moraru, Arief Udhiarto, Sakito Miki, Miftahul Anwar, Yuya Kawai, Takeshi Mizuno

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

We have recently proposed and demonstrated a new device concept, "Si-based single-dopant atom device", consisting of only one or a few dopant atoms in the channel of Si field-effect transistors. The device characteristics are determined by a dopant, which is mediating electron or hole transport between source and drain electrodes. In this paper, our recent results on electronic and photonic applications are introduced. Furthermore, single-dopant images obtained by a scanning probe microscope are also presented.

Original languageEnglish
Title of host publicationGlobal Research and Education
Pages205-208
Number of pages4
DOIs
Publication statusPublished - 16 May 2011
Event9th International Conference on Global Research and Education, INTER-ACADEMIA 2010 - Riga, Latvia
Duration: 9 Aug 201012 Aug 2010

Publication series

NameAdvanced Materials Research
Volume222
ISSN (Print)1022-6680

Conference

Conference9th International Conference on Global Research and Education, INTER-ACADEMIA 2010
CountryLatvia
CityRiga
Period9/08/1012/08/10

Keywords

  • Silicon
  • Single-dopant
  • Single-electron devices

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