Bismuth ferrite (BiFeO3 or BFO) is the most promising single-phase multiferroic material exhibiting ferroelectric and antiferromagnetism at room temperature. It has attracted the interest of researchers because it could be widely used in microelectronic devices such as multiple state memory storage devices, data storage, spintronics, optical, and sensors magnetic. But along with these potentials, this material has serious drawbacks and some of them are the large dielectric loss and high leakage current. Since the ferroelectricity property of BFO mainly originates from a lone pair of Bi3+ ion electrons, it is very important to dope from A-site to improve its characteristics. Hence Zirconium doped Bi-site in BiFeO3 has been synthesized by the sol-gel method to study its structural and electrical properties using impedance analysis at room temperature. Structural characteristics were studied by XRD and XRF. Based on the pattern of X-Ray Diffraction, it is found that the material has a hexagonal structure with R3c space group. The electrical properties were carried out using LRC-meters in the frequency range of 1MHz-100Hz at room temperature and were analyzed by impedance spectroscopy analysis. We obtained constant dielectric and tan loss from BZFO has increased with the increasing Zr concentration.