Recombination at defects in amorphous silicon (a-Si:H)

Chemical Compounds

• Amorphous Silicon 99%
• Tunneling 74%
• Dangling Bond 48%
• Photoexcitation 40%
• Electron Particle 39%
• Photoluminescence Spectrum 36%
• Molecular Cluster 23%
• Liquid Film 17%
• Energy 17%

Engineering & Materials Science

• Amorphous silicon 100%
• Defects 50%
• Electrons 21%
• Photoexcitation 19%
• Dangling bonds 19%
• Excitation energy 17%
• Photoluminescence 16%
• Defect density 14%
• Paramagnetic resonance 14%
• Phosphorus 12%
• Boron 11%
• Doping (additives) 11%
• Temperature 4%

Physics & Astronomy

• amorphous silicon 67%
• defects 40%
• majority carriers 11%
• electron bombardment 11%
• phosphorus 8%
• excitation 8%
• electron paramagnetic resonance 8%
• boron 7%
• photoluminescence 6%
• configurations 4%
• electrons 3%
• temperature 2%
• energy 2%