Raman spectroscopy of doped and compensated laser crystallized polycrystalline silicon thin films

Rosari Saleh, N. H. Nickel

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The influence of dopant and the microstructure on hydrogen bonding in doped and compensated laser crystallized polycrystalline silicon (poly-Si) films were investigated using Raman backscattering spectrometry. With increasing boron and phosphorous concentration, the LO-TO phonon line in doped as well as in compensated films shifts to smaller wave numbers and broadens asymmetrically. The results are discussed in terms of resonant interaction between optical phonons and direct intraband transitions known as a Fano resonance. Doping results also in significant changes of hydrogen bonding configurations.

Original languageEnglish
Pages (from-to)143-147
Number of pages5
JournalSurface and Coatings Technology
Volume198
Issue number1-3 SPEC. ISS.
DOIs
Publication statusPublished - 1 Aug 2005

Keywords

  • Compensated polycrystalline silicon
  • Laser crystallization
  • Raman spectroscopy

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