Raman spectroscopy of doped and compensated laser crystallized polycrystalline silicon thin films

Rosari Saleh; N. H. Nickel

doi:10.1016/j.surfcoat.2004.10.128

Raman spectroscopy of doped and compensated laser crystallized polycrystalline silicon thin films

Rosari Saleh, N. H. Nickel

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The influence of dopant and the microstructure on hydrogen bonding in doped and compensated laser crystallized polycrystalline silicon (poly-Si) films were investigated using Raman backscattering spectrometry. With increasing boron and phosphorous concentration, the LO-TO phonon line in doped as well as in compensated films shifts to smaller wave numbers and broadens asymmetrically. The results are discussed in terms of resonant interaction between optical phonons and direct intraband transitions known as a Fano resonance. Doping results also in significant changes of hydrogen bonding configurations.

Original language	English
Pages (from-to)	143-147
Number of pages	5
Journal	Surface and Coatings Technology
Volume	198
Issue number	1-3 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.surfcoat.2004.10.128
Publication status	Published - 1 Aug 2005

Keywords

Compensated polycrystalline silicon
Laser crystallization
Raman spectroscopy

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10.1016/j.surfcoat.2004.10.128

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title = "Raman spectroscopy of doped and compensated laser crystallized polycrystalline silicon thin films",

abstract = "The influence of dopant and the microstructure on hydrogen bonding in doped and compensated laser crystallized polycrystalline silicon (poly-Si) films were investigated using Raman backscattering spectrometry. With increasing boron and phosphorous concentration, the LO-TO phonon line in doped as well as in compensated films shifts to smaller wave numbers and broadens asymmetrically. The results are discussed in terms of resonant interaction between optical phonons and direct intraband transitions known as a Fano resonance. Doping results also in significant changes of hydrogen bonding configurations.",

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T1 - Raman spectroscopy of doped and compensated laser crystallized polycrystalline silicon thin films

AU - Saleh, Rosari

AU - Nickel, N. H.

PY - 2005/8/1

Y1 - 2005/8/1

N2 - The influence of dopant and the microstructure on hydrogen bonding in doped and compensated laser crystallized polycrystalline silicon (poly-Si) films were investigated using Raman backscattering spectrometry. With increasing boron and phosphorous concentration, the LO-TO phonon line in doped as well as in compensated films shifts to smaller wave numbers and broadens asymmetrically. The results are discussed in terms of resonant interaction between optical phonons and direct intraband transitions known as a Fano resonance. Doping results also in significant changes of hydrogen bonding configurations.

AB - The influence of dopant and the microstructure on hydrogen bonding in doped and compensated laser crystallized polycrystalline silicon (poly-Si) films were investigated using Raman backscattering spectrometry. With increasing boron and phosphorous concentration, the LO-TO phonon line in doped as well as in compensated films shifts to smaller wave numbers and broadens asymmetrically. The results are discussed in terms of resonant interaction between optical phonons and direct intraband transitions known as a Fano resonance. Doping results also in significant changes of hydrogen bonding configurations.

KW - Compensated polycrystalline silicon

KW - Laser crystallization

KW - Raman spectroscopy

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U2 - 10.1016/j.surfcoat.2004.10.128

DO - 10.1016/j.surfcoat.2004.10.128

M3 - Article

AN - SCOPUS:20844457351

VL - 198

SP - 143

EP - 147

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

IS - 1-3 SPEC. ISS.

ER -

Raman spectroscopy of doped and compensated laser crystallized polycrystalline silicon thin films

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Keywords

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