Raman spectroscopy of B-doped microcrystalline silicon films

Rosari Saleh; N. H. Nickel

doi:10.1016/S0040-6090(02)01203-8

Raman spectroscopy of B-doped microcrystalline silicon films

Rosari Saleh, N. H. Nickel

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

100 Citations (Scopus)

Abstract

The boron-doped microcrystalline silicon (μc-Si:H) films have been deposited in a plasma-enhanced chemical vapor deposition system using hydrogen (H₂) as a diluent gas of silane (SiH₄) and diborane (B₂H₆) as the dopant gas at several gas phase doping ratios. The structural properties of the films have been investigated by Raman measurements. The Raman spectroscopy revealed that the increase of diborane gas phase doping ratio to silane reduces the crystalline volume fraction (X_C) and changes the nature of the hydrogen bonded silicon in the films.

Original language	English
Pages (from-to)	266-269
Number of pages	4
Journal	Thin Solid Films
Volume	427
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(02)01203-8
Publication status	Published - 3 Mar 2003
Event	E-MRS, K - Strasbourg, France Duration: 18 Jun 2003 → 21 Jun 2003

Keywords

Boron
Microcrystalline silicon
Raman scattering

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10.1016/S0040-6090(02)01203-8

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title = "Raman spectroscopy of B-doped microcrystalline silicon films",

abstract = "The boron-doped microcrystalline silicon (μc-Si:H) films have been deposited in a plasma-enhanced chemical vapor deposition system using hydrogen (H2) as a diluent gas of silane (SiH4) and diborane (B2H6) as the dopant gas at several gas phase doping ratios. The structural properties of the films have been investigated by Raman measurements. The Raman spectroscopy revealed that the increase of diborane gas phase doping ratio to silane reduces the crystalline volume fraction (XC) and changes the nature of the hydrogen bonded silicon in the films.",

keywords = "Boron, Microcrystalline silicon, Raman scattering",

author = "Rosari Saleh and Nickel, {N. H.}",

year = "2003",

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TY - JOUR

T1 - Raman spectroscopy of B-doped microcrystalline silicon films

AU - Saleh, Rosari

AU - Nickel, N. H.

PY - 2003/3/3

Y1 - 2003/3/3

N2 - The boron-doped microcrystalline silicon (μc-Si:H) films have been deposited in a plasma-enhanced chemical vapor deposition system using hydrogen (H2) as a diluent gas of silane (SiH4) and diborane (B2H6) as the dopant gas at several gas phase doping ratios. The structural properties of the films have been investigated by Raman measurements. The Raman spectroscopy revealed that the increase of diborane gas phase doping ratio to silane reduces the crystalline volume fraction (XC) and changes the nature of the hydrogen bonded silicon in the films.

AB - The boron-doped microcrystalline silicon (μc-Si:H) films have been deposited in a plasma-enhanced chemical vapor deposition system using hydrogen (H2) as a diluent gas of silane (SiH4) and diborane (B2H6) as the dopant gas at several gas phase doping ratios. The structural properties of the films have been investigated by Raman measurements. The Raman spectroscopy revealed that the increase of diborane gas phase doping ratio to silane reduces the crystalline volume fraction (XC) and changes the nature of the hydrogen bonded silicon in the films.

KW - Boron

KW - Microcrystalline silicon

KW - Raman scattering

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U2 - 10.1016/S0040-6090(02)01203-8

DO - 10.1016/S0040-6090(02)01203-8

M3 - Conference article

AN - SCOPUS:0037416657

SN - 0040-6090

VL - 427

SP - 266

EP - 269

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

T2 - E-MRS, K

Y2 - 18 June 2003 through 21 June 2003

ER -

Raman spectroscopy of B-doped microcrystalline silicon films

Abstract

Keywords

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