Raman spectroscopy of B-doped microcrystalline silicon films

Rosari Saleh, N. H. Nickel

Research output: Contribution to journalConference articlepeer-review

93 Citations (Scopus)

Abstract

The boron-doped microcrystalline silicon (μc-Si:H) films have been deposited in a plasma-enhanced chemical vapor deposition system using hydrogen (H2) as a diluent gas of silane (SiH4) and diborane (B2H6) as the dopant gas at several gas phase doping ratios. The structural properties of the films have been investigated by Raman measurements. The Raman spectroscopy revealed that the increase of diborane gas phase doping ratio to silane reduces the crystalline volume fraction (XC) and changes the nature of the hydrogen bonded silicon in the films.

Original languageEnglish
Pages (from-to)266-269
Number of pages4
JournalThin Solid Films
Volume427
Issue number1-2
DOIs
Publication statusPublished - 3 Mar 2003
EventE-MRS, K - Strasbourg, France
Duration: 18 Jun 200321 Jun 2003

Keywords

  • Boron
  • Microcrystalline silicon
  • Raman scattering

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