Pulsed laser deposition of quaternary Cu 2ZnSnSe 4 thin films

Rachmat Adhi Wibowo; Eun Soo Lee; Badrul Munir; Kyoo Ho Kim

doi:10.1002/pssa.200723144

Pulsed laser deposition of quaternary Cu ₂ZnSnSe ₄ thin films

Rachmat Adhi Wibowo, Eun Soo Lee, Badrul Munir, Kyoo Ho Kim

Department of Metallurgical and Material Engineering

Research output: Contribution to journal › Article › peer-review

144 Citations (Scopus)

Abstract

We report the successful growth of quaternary Cu ₂ZnSnSe ₄ (CZTSe) thin films by pulsed laser deposition (PLD) using Nd : YAG laser. It was found that CZTSe films atomic ratios were close to target atomic ratios with a slight metal excess and selenium deficiency. Quaternary CZTSe films grew and crystallized as a stannite-type structure even at room temperature. All CZTSe films showed a p-type electrical conductivity with a high absorption coefficient of 10 ⁴-10 ⁵ cm ^-1, a bandgap of 1.5 eV and a carrier concentration of the order of 10 ¹⁷-10 ¹⁸ cm ^-3. These results show that pulsed laser deposition could be employed as a particularly effective deposition method for the preparation of quaternary compounds thin films.

Original language	English
Pages (from-to)	3373-3379
Number of pages	7
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	204
Issue number	10
DOIs	https://doi.org/10.1002/pssa.200723144
Publication status	Published - Oct 2007

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@article{843a8da86f2445db8decae775a3c13f4,

title = "Pulsed laser deposition of quaternary Cu 2ZnSnSe 4 thin films",

abstract = "We report the successful growth of quaternary Cu 2ZnSnSe 4 (CZTSe) thin films by pulsed laser deposition (PLD) using Nd : YAG laser. It was found that CZTSe films atomic ratios were close to target atomic ratios with a slight metal excess and selenium deficiency. Quaternary CZTSe films grew and crystallized as a stannite-type structure even at room temperature. All CZTSe films showed a p-type electrical conductivity with a high absorption coefficient of 10 4-10 5 cm -1, a bandgap of 1.5 eV and a carrier concentration of the order of 10 17-10 18 cm -3. These results show that pulsed laser deposition could be employed as a particularly effective deposition method for the preparation of quaternary compounds thin films.",

author = "Wibowo, {Rachmat Adhi} and Lee, {Eun Soo} and Badrul Munir and Kim, {Kyoo Ho}",

year = "2007",

month = oct,

doi = "10.1002/pssa.200723144",

language = "English",

volume = "204",

pages = "3373--3379",

journal = "Physica Status Solidi (A) Applications and Materials Science",

issn = "1862-6300",

publisher = "Wiley-VCH Verlag",

number = "10",

}

TY - JOUR

T1 - Pulsed laser deposition of quaternary Cu 2ZnSnSe 4 thin films

AU - Wibowo, Rachmat Adhi

AU - Lee, Eun Soo

AU - Munir, Badrul

AU - Kim, Kyoo Ho

PY - 2007/10

Y1 - 2007/10

N2 - We report the successful growth of quaternary Cu 2ZnSnSe 4 (CZTSe) thin films by pulsed laser deposition (PLD) using Nd : YAG laser. It was found that CZTSe films atomic ratios were close to target atomic ratios with a slight metal excess and selenium deficiency. Quaternary CZTSe films grew and crystallized as a stannite-type structure even at room temperature. All CZTSe films showed a p-type electrical conductivity with a high absorption coefficient of 10 4-10 5 cm -1, a bandgap of 1.5 eV and a carrier concentration of the order of 10 17-10 18 cm -3. These results show that pulsed laser deposition could be employed as a particularly effective deposition method for the preparation of quaternary compounds thin films.

AB - We report the successful growth of quaternary Cu 2ZnSnSe 4 (CZTSe) thin films by pulsed laser deposition (PLD) using Nd : YAG laser. It was found that CZTSe films atomic ratios were close to target atomic ratios with a slight metal excess and selenium deficiency. Quaternary CZTSe films grew and crystallized as a stannite-type structure even at room temperature. All CZTSe films showed a p-type electrical conductivity with a high absorption coefficient of 10 4-10 5 cm -1, a bandgap of 1.5 eV and a carrier concentration of the order of 10 17-10 18 cm -3. These results show that pulsed laser deposition could be employed as a particularly effective deposition method for the preparation of quaternary compounds thin films.

UR - http://www.scopus.com/inward/record.url?scp=35349006402&partnerID=8YFLogxK

U2 - 10.1002/pssa.200723144

DO - 10.1002/pssa.200723144

M3 - Article

AN - SCOPUS:35349006402

SN - 1862-6300

VL - 204

SP - 3373

EP - 3379

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 10

ER -

Pulsed laser deposition of quaternary Cu ₂ZnSnSe ₄ thin films

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