Pulsed laser deposition of quaternary Cu 2ZnSnSe 4 thin films

Rachmat Adhi Wibowo, Eun Soo Lee, Badrul Munir, Kyoo Ho Kim

Research output: Contribution to journalArticlepeer-review

148 Citations (Scopus)


We report the successful growth of quaternary Cu 2ZnSnSe 4 (CZTSe) thin films by pulsed laser deposition (PLD) using Nd : YAG laser. It was found that CZTSe films atomic ratios were close to target atomic ratios with a slight metal excess and selenium deficiency. Quaternary CZTSe films grew and crystallized as a stannite-type structure even at room temperature. All CZTSe films showed a p-type electrical conductivity with a high absorption coefficient of 10 4-10 5 cm -1, a bandgap of 1.5 eV and a carrier concentration of the order of 10 17-10 18 cm -3. These results show that pulsed laser deposition could be employed as a particularly effective deposition method for the preparation of quaternary compounds thin films.

Original languageEnglish
Pages (from-to)3373-3379
Number of pages7
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number10
Publication statusPublished - Oct 2007


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