We report the successful growth of quaternary Cu 2ZnSnSe 4 (CZTSe) thin films by pulsed laser deposition (PLD) using Nd : YAG laser. It was found that CZTSe films atomic ratios were close to target atomic ratios with a slight metal excess and selenium deficiency. Quaternary CZTSe films grew and crystallized as a stannite-type structure even at room temperature. All CZTSe films showed a p-type electrical conductivity with a high absorption coefficient of 10 4-10 5 cm -1, a bandgap of 1.5 eV and a carrier concentration of the order of 10 17-10 18 cm -3. These results show that pulsed laser deposition could be employed as a particularly effective deposition method for the preparation of quaternary compounds thin films.
|Number of pages||7|
|Journal||Physica Status Solidi (A) Applications and Materials Science|
|Publication status||Published - 1 Oct 2007|