Properties of Al-doped ZnO thin film sputtered from powder compacted target

Kyoo Ho Kim; Rachmat Adhi Wibowo; Badrul Munir

doi:10.1016/j.matlet.2005.12.055

Properties of Al-doped ZnO thin film sputtered from powder compacted target

Kyoo Ho Kim, Rachmat Adhi Wibowo, Badrul Munir

Department of Metallurgical and Material Engineering

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

We demonstrated the characterization of Al-doped ZnO thin film deposited from powder compacted target using RF magnetron sputtering. Various film thicknesses and substrate temperatures were used as deposition parameters for the purpose of obtaining optimum results. It shows that deposited AZO films have stronger preferred (002) c-axis crystalline orientation as both film thickness and substrate temperature increased. Film's resistivity and sheet resistance significantly decreased as film thickness increased. Higher surface roughness and irregular surface structure occurred at 200 °C substrate temperature. Films possess high optical transmittance of approximately 90% and demonstrated an optical band gap of 3.35 eV. At 200 °C substrate temperature, a resistivity of 4.4 × 10^{- 3} Ω cm was obtained.

Original language	English
Pages (from-to)	1931-1935
Number of pages	5
Journal	Materials Letters
Volume	60
Issue number	15
DOIs	https://doi.org/10.1016/j.matlet.2005.12.055
Publication status	Published - Jul 2006

Keywords

Al-doped ZnO
Powder compacted target
Sputtering
Transparent conducting

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10.1016/j.matlet.2005.12.055

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@article{89469f3f01de4a8791fe4afb7b8879aa,

title = "Properties of Al-doped ZnO thin film sputtered from powder compacted target",

abstract = "We demonstrated the characterization of Al-doped ZnO thin film deposited from powder compacted target using RF magnetron sputtering. Various film thicknesses and substrate temperatures were used as deposition parameters for the purpose of obtaining optimum results. It shows that deposited AZO films have stronger preferred (002) c-axis crystalline orientation as both film thickness and substrate temperature increased. Film's resistivity and sheet resistance significantly decreased as film thickness increased. Higher surface roughness and irregular surface structure occurred at 200 °C substrate temperature. Films possess high optical transmittance of approximately 90% and demonstrated an optical band gap of 3.35 eV. At 200 °C substrate temperature, a resistivity of 4.4 × 10- 3 Ω cm was obtained.",

keywords = "Al-doped ZnO, Powder compacted target, Sputtering, Transparent conducting",

author = "Kim, {Kyoo Ho} and Wibowo, {Rachmat Adhi} and Badrul Munir",

year = "2006",

month = jul,

doi = "10.1016/j.matlet.2005.12.055",

language = "English",

volume = "60",

pages = "1931--1935",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

number = "15",

}

TY - JOUR

T1 - Properties of Al-doped ZnO thin film sputtered from powder compacted target

AU - Kim, Kyoo Ho

AU - Wibowo, Rachmat Adhi

AU - Munir, Badrul

PY - 2006/7

Y1 - 2006/7

N2 - We demonstrated the characterization of Al-doped ZnO thin film deposited from powder compacted target using RF magnetron sputtering. Various film thicknesses and substrate temperatures were used as deposition parameters for the purpose of obtaining optimum results. It shows that deposited AZO films have stronger preferred (002) c-axis crystalline orientation as both film thickness and substrate temperature increased. Film's resistivity and sheet resistance significantly decreased as film thickness increased. Higher surface roughness and irregular surface structure occurred at 200 °C substrate temperature. Films possess high optical transmittance of approximately 90% and demonstrated an optical band gap of 3.35 eV. At 200 °C substrate temperature, a resistivity of 4.4 × 10- 3 Ω cm was obtained.

AB - We demonstrated the characterization of Al-doped ZnO thin film deposited from powder compacted target using RF magnetron sputtering. Various film thicknesses and substrate temperatures were used as deposition parameters for the purpose of obtaining optimum results. It shows that deposited AZO films have stronger preferred (002) c-axis crystalline orientation as both film thickness and substrate temperature increased. Film's resistivity and sheet resistance significantly decreased as film thickness increased. Higher surface roughness and irregular surface structure occurred at 200 °C substrate temperature. Films possess high optical transmittance of approximately 90% and demonstrated an optical band gap of 3.35 eV. At 200 °C substrate temperature, a resistivity of 4.4 × 10- 3 Ω cm was obtained.

KW - Al-doped ZnO

KW - Powder compacted target

KW - Sputtering

KW - Transparent conducting

UR - http://www.scopus.com/inward/record.url?scp=33646065675&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2005.12.055

DO - 10.1016/j.matlet.2005.12.055

M3 - Article

AN - SCOPUS:33646065675

SN - 0167-577X

VL - 60

SP - 1931

EP - 1935

JO - Materials Letters

JF - Materials Letters

IS - 15

ER -

Properties of Al-doped ZnO thin film sputtered from powder compacted target

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Keywords

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