Probing the impact of donor quantum dots with high-bias stability diagrams in selectively-doped Si nanoscale transistors

A. Afiff, A. Samanta, T. Hasan, Arief Udhiarto, D. Hartanto, Harry Sudibyo S., M. Tabe, D. Moraru

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have recently reported single-electron tunneling (SET) via a-few-donor QDs at high temperatures in high-concentration selectively-doped SOI-FETs. A central QD works by SET mechanism above 150 Κ at small source-drain bias due to enhanced tunnel barrier. For tuning the tunnel barrier, it becomes critical to understand the impact of the donor-QD location on the SET transport. Here, we report the possibility of probing donor-QDs from center to near the lead edge using high-bias stability diagrams. We also observe and model the changes due to purposely shifted positions of the selectively-doped area.

Original languageEnglish
Title of host publication2017 Silicon Nanoelectronics Workshop, SNW 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages25-26
Number of pages2
ISBN (Electronic)9784863486478
DOIs
Publication statusPublished - 29 Dec 2017
Event22nd Silicon Nanoelectronics Workshop, SNW 2017 - Kyoto, Japan
Duration: 4 Jun 20175 Jun 2017

Publication series

Name2017 Silicon Nanoelectronics Workshop, SNW 2017
Volume2017-January

Conference

Conference22nd Silicon Nanoelectronics Workshop, SNW 2017
CountryJapan
CityKyoto
Period4/06/175/06/17

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