@inproceedings{b4a99c6e813349099629dab165091a36,
title = "Probing the impact of donor quantum dots with high-bias stability diagrams in selectively-doped Si nanoscale transistors",
abstract = "We have recently reported single-electron tunneling (SET) via a-few-donor QDs at high temperatures in high-concentration selectively-doped SOI-FETs. A central QD works by SET mechanism above 150 Κ at small source-drain bias due to enhanced tunnel barrier. For tuning the tunnel barrier, it becomes critical to understand the impact of the donor-QD location on the SET transport. Here, we report the possibility of probing donor-QDs from center to near the lead edge using high-bias stability diagrams. We also observe and model the changes due to purposely shifted positions of the selectively-doped area.",
author = "A. Afiff and A. Samanta and T. Hasan and Arief Udhiarto and D. Hartanto and S., {Harry Sudibyo} and M. Tabe and D. Moraru",
note = "Publisher Copyright: {\textcopyright} 2017 JSAP.; 22nd Silicon Nanoelectronics Workshop, SNW 2017 ; Conference date: 04-06-2017 Through 05-06-2017",
year = "2017",
month = dec,
day = "29",
doi = "10.23919/SNW.2017.8242279",
language = "English",
series = "2017 Silicon Nanoelectronics Workshop, SNW 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "25--26",
booktitle = "2017 Silicon Nanoelectronics Workshop, SNW 2017",
address = "United States",
}