Abstract
Dense monolithic silicon carbide (SiC) was successfully sintered by hot pressing at 1750 °C for 1 h under an applied pressure of 20 MPa with the addition of a nitrate-based additive. With the addition of MgO-Y2O3 and Al2O3-Y2O3 in nitrate form, a relative density of more than 98% was achieved, while in the oxide form it was 85.0 and 96.0%, respectively. In fact, MgO-Y2O3 showed poor densification due to the eutectic temperature of 2110 °C, however, the addition of the nitrate form of MgO-Y2O3 greatly enhanced the densification. The sintering mechanism in the nitrate-based additive is liquid phase sintering, identified by the presence of an oxide phase, i.e., Y2O3 in the SiC with the addition of Al2O3-Y2O3 in nitrate form. Moreover, the addition of nitrate form suppressed the grain growth of SiC, which was believed to be due to the adequate rearrangement stage during sintering.
Translated title of the contribution | Enhancing The Density Of Silicon Carbide With The Addition Of Nitrate-Based Additives |
---|---|
Original language | Bosnian |
Pages (from-to) | 389-395 |
Number of pages | 7 |
Journal | Journal of Mining and Metallurgy, Section B: Metallurgy |
Volume | 58 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2022 |
Keywords
- Density
- Nitrate
- Oxide
- Silicon carbide
- Sintering additive