Photon-induced random telegraph signal due to potential fluctuation of a single donor-acceptor pair in nanoscale Si p-n junctions

Arief Udhiarto, Daniel Moraru, Sri Purwiyanti, Youhei Kuzuya, Takeshi Mizuno, Hiroshi Mizuta, Michiharu Tabe

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13 Citations (Scopus)

Abstract

We study the photoresponse of Si nanoscale p-n and p-i-n diodes. As a result, we find a photon-sensitive multilevel random telegraph signal (RTS) in p-n diodes, but not in p-i-n diodes. From this fact and analysis of current jumps in the RTS, the multilevel RTS is ascribed to single photocarrier charging and discharging in a donor-acceptor pair in the depletion region. Thus, it is found that a donor-acceptor pair plays an important role in p-n junctions, while, according to our previous report, a single donor (acceptor) works as an electron (hole) trap in junctionless field-effect transistors.

Original languageEnglish
Article number112201
JournalApplied Physics Express
Volume5
Issue number11
DOIs
Publication statusPublished - 1 Nov 2012

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