TY - JOUR
T1 - Photon-induced random telegraph signal due to potential fluctuation of a single donor-acceptor pair in nanoscale Si p-n junctions
AU - Udhiarto, Arief
AU - Moraru, Daniel
AU - Purwiyanti, Sri
AU - Kuzuya, Youhei
AU - Mizuno, Takeshi
AU - Mizuta, Hiroshi
AU - Tabe, Michiharu
PY - 2012/11
Y1 - 2012/11
N2 - We study the photoresponse of Si nanoscale p-n and p-i-n diodes. As a result, we find a photon-sensitive multilevel random telegraph signal (RTS) in p-n diodes, but not in p-i-n diodes. From this fact and analysis of current jumps in the RTS, the multilevel RTS is ascribed to single photocarrier charging and discharging in a donor-acceptor pair in the depletion region. Thus, it is found that a donor-acceptor pair plays an important role in p-n junctions, while, according to our previous report, a single donor (acceptor) works as an electron (hole) trap in junctionless field-effect transistors.
AB - We study the photoresponse of Si nanoscale p-n and p-i-n diodes. As a result, we find a photon-sensitive multilevel random telegraph signal (RTS) in p-n diodes, but not in p-i-n diodes. From this fact and analysis of current jumps in the RTS, the multilevel RTS is ascribed to single photocarrier charging and discharging in a donor-acceptor pair in the depletion region. Thus, it is found that a donor-acceptor pair plays an important role in p-n junctions, while, according to our previous report, a single donor (acceptor) works as an electron (hole) trap in junctionless field-effect transistors.
UR - http://www.scopus.com/inward/record.url?scp=84869199217&partnerID=8YFLogxK
U2 - 10.1143/APEX.5.112201
DO - 10.1143/APEX.5.112201
M3 - Article
AN - SCOPUS:84869199217
SN - 1882-0778
VL - 5
JO - Applied Physics Express
JF - Applied Physics Express
IS - 11
M1 - 112201
ER -