Phase equilibria were established in the In-Ir-As system at 600 °C using X-ray diffraction and electron probe microanalysis. InAs was shown to be in thermodynamic equilibrium with indium, IrAs3, and IrAs2. Owing to undesirable intrinsic properties, none of these phases is suitable as a contact material to InAs or to compound semiconductor alloys containing InAs as a constituent. However, a quaternary Ga-In-Ir-As phase diagram sample showed that Ir3Ga5 was in thermodynamic equilibrium with the solid solution InxGa1-xAs from x = 0 to at least x = 0.55. Therefore, Ir3Ga5 could be used as a thermodynamically stable contact material to In0.53Ga0.47As, one of the most technologically important compositions of the InxGa1-xAs semiconductor alloy.
|Number of pages||4|
|Journal||Zeitschrift fuer Metallkunde/Materials Research and Advanced Techniques|
|Publication status||Published - 1 Apr 1994|