TY - JOUR
T1 - Phase equilibria in the In-Co-As system at 475°C
AU - Swenson, D.
AU - Sutopo,
AU - Chang, Y. A.
N1 - Funding Information:
The authorsw ish to thank E. Monberg for providing InAs. They also wish to expresst heir gratitudet o S.-L. Chen for his help in performingt hermodynamicc alcu-lations, to S. Mohney for her critical review of this manuscript,a nd to the National ScienceF oundation for their financial support of this work through Grant No. NSF-DMR-94-24478.
PY - 1996/1/1
Y1 - 1996/1/1
N2 - Phase equilibria in the In-Co-As system are established at 475°C, using X-ray powder diffraction (XRD) and electron probe microanalysis (EPMA). The phases indium, CoAs(α), CoAs2(α) and CoAs3 are shown to be in thermodynamic equilibrium with InAs. A ternary phase of unknown crystal structure, with a narrow range of homogeneity centered about the composition Co0.48In0.37As0.15, is found to exist in this system. A quaternary, 600°C In-Ga-Co-As phase diagram sample is also analyzed in the present study, and shows that cobalt-rich CoGa is in thermodynamic equilibrium with In0.63Ga0.37As. These results, in conjunction with previous investigations of the Ga-Co-As system, suggest that CoAs(α) would be suitable as a thermodynamically stable contact material to InxGa1-xAs for any value of x. However, there may be some practical problems associated with the fabrication of CoAs(α) using conventional deposition methods. It is further suggested that both stoichiometric and cobalt-rich CoGa should be studied as potentially stable contact materials to InxG1-xAs, and in particular to In0.53Ga0.47As, which is among the most technologically important compositions of the InxGa1-xAs semiconductor alloy.
AB - Phase equilibria in the In-Co-As system are established at 475°C, using X-ray powder diffraction (XRD) and electron probe microanalysis (EPMA). The phases indium, CoAs(α), CoAs2(α) and CoAs3 are shown to be in thermodynamic equilibrium with InAs. A ternary phase of unknown crystal structure, with a narrow range of homogeneity centered about the composition Co0.48In0.37As0.15, is found to exist in this system. A quaternary, 600°C In-Ga-Co-As phase diagram sample is also analyzed in the present study, and shows that cobalt-rich CoGa is in thermodynamic equilibrium with In0.63Ga0.37As. These results, in conjunction with previous investigations of the Ga-Co-As system, suggest that CoAs(α) would be suitable as a thermodynamically stable contact material to InxGa1-xAs for any value of x. However, there may be some practical problems associated with the fabrication of CoAs(α) using conventional deposition methods. It is further suggested that both stoichiometric and cobalt-rich CoGa should be studied as potentially stable contact materials to InxG1-xAs, and in particular to In0.53Ga0.47As, which is among the most technologically important compositions of the InxGa1-xAs semiconductor alloy.
KW - Cobalt
KW - Indium arsenide
KW - Indium gallium arsenide
KW - Metal/semiconductor contacts
KW - Phase diagrams
UR - http://www.scopus.com/inward/record.url?scp=0030172706&partnerID=8YFLogxK
U2 - 10.1016/0254-0584(96)80059-9
DO - 10.1016/0254-0584(96)80059-9
M3 - Article
AN - SCOPUS:0030172706
SN - 0254-0584
VL - 44
SP - 215
EP - 221
JO - Materials Chemistry and Physics
JF - Materials Chemistry and Physics
IS - 3
ER -