Optoelectrical lifetime evaluation of single holes in SOI MOSFET

Wei Du, Dedy Septono Putranto, Hiroaki Satoh, Atsushi Ono, Purnomo Sidi Priambodo, Djoko Hartanto, Hiroshi Inokawa

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Optoelectrical method to evaluate the lifetime of single holes in SOI MOSFET is presented, in which the device is illuminated with a continuous light and the histograms of the digitized drain current is analyzed. It was found that smaller number of holes and the higher transverse electric field greatly enhance the hole lifetime.

Original languageEnglish
Title of host publication2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012
DOIs
Publication statusPublished - 12 Oct 2012
Event2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 - Honolulu, HI, United States
Duration: 10 Jun 201211 Jun 2012

Publication series

Name2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

Conference

Conference2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012
CountryUnited States
CityHonolulu, HI
Period10/06/1211/06/12

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