Optoelectrical lifetime evaluation of single holes in SOI MOSFET

Wei Du; Dedy Septono Putranto; Hiroaki Satoh; Atsushi Ono; Purnomo Sidi Priambodo; Djoko Hartanto; Hiroshi Inokawa

doi:10.1109/SNW.2012.6243297

Optoelectrical lifetime evaluation of single holes in SOI MOSFET

Wei Du, Dedy Septono Putranto, Hiroaki Satoh, Atsushi Ono, Purnomo Sidi Priambodo, Djoko Hartanto, Hiroshi Inokawa

Department of Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Optoelectrical method to evaluate the lifetime of single holes in SOI MOSFET is presented, in which the device is illuminated with a continuous light and the histograms of the digitized drain current is analyzed. It was found that smaller number of holes and the higher transverse electric field greatly enhance the hole lifetime.

Original language	English
Title of host publication	2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012
DOIs	https://doi.org/10.1109/SNW.2012.6243297
Publication status	Published - 2012
Event	2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 - Honolulu, HI, United States Duration: 10 Jun 2012 → 11 Jun 2012

Publication series

Name	2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

Conference

Conference	2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012
Country/Territory	United States
City	Honolulu, HI
Period	10/06/12 → 11/06/12

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10.1109/SNW.2012.6243297

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title = "Optoelectrical lifetime evaluation of single holes in SOI MOSFET",

abstract = "Optoelectrical method to evaluate the lifetime of single holes in SOI MOSFET is presented, in which the device is illuminated with a continuous light and the histograms of the digitized drain current is analyzed. It was found that smaller number of holes and the higher transverse electric field greatly enhance the hole lifetime.",

author = "Wei Du and Putranto, {Dedy Septono} and Hiroaki Satoh and Atsushi Ono and Priambodo, {Purnomo Sidi} and Djoko Hartanto and Hiroshi Inokawa",

year = "2012",

doi = "10.1109/SNW.2012.6243297",

language = "English",

isbn = "9781467309943",

series = "2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012",

booktitle = "2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012",

note = "2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 ; Conference date: 10-06-2012 Through 11-06-2012",

}

Du, W, Putranto, DS, Satoh, H, Ono, A, Priambodo, PS, Hartanto, D & Inokawa, H 2012, Optoelectrical lifetime evaluation of single holes in SOI MOSFET. in 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012., 6243297, 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012, 2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012, Honolulu, HI, United States, 10/06/12. https://doi.org/10.1109/SNW.2012.6243297

TY - GEN

T1 - Optoelectrical lifetime evaluation of single holes in SOI MOSFET

AU - Du, Wei

AU - Putranto, Dedy Septono

AU - Satoh, Hiroaki

AU - Ono, Atsushi

AU - Priambodo, Purnomo Sidi

AU - Hartanto, Djoko

AU - Inokawa, Hiroshi

PY - 2012

Y1 - 2012

N2 - Optoelectrical method to evaluate the lifetime of single holes in SOI MOSFET is presented, in which the device is illuminated with a continuous light and the histograms of the digitized drain current is analyzed. It was found that smaller number of holes and the higher transverse electric field greatly enhance the hole lifetime.

AB - Optoelectrical method to evaluate the lifetime of single holes in SOI MOSFET is presented, in which the device is illuminated with a continuous light and the histograms of the digitized drain current is analyzed. It was found that smaller number of holes and the higher transverse electric field greatly enhance the hole lifetime.

UR - http://www.scopus.com/inward/record.url?scp=84867209795&partnerID=8YFLogxK

U2 - 10.1109/SNW.2012.6243297

DO - 10.1109/SNW.2012.6243297

M3 - Conference contribution

AN - SCOPUS:84867209795

SN - 9781467309943

T3 - 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

BT - 2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012

T2 - 2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012

Y2 - 10 June 2012 through 11 June 2012

ER -

Optoelectrical lifetime evaluation of single holes in SOI MOSFET

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