Optical properties of gallium nitride heterostructures grown on silicon for waveguiding application

Irma Saraswati, Arnaud Stolz, S. Ko, Elhadj Dogheche, Nji Raden Poespawati, Retno Wigajatri Purnamaningsih, Didier Decoster

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Citation (Scopus)

Abstract

Gallium nitride (GaN) on silicon (Si) is governed by the possibility to use this family of semiconductor for novel optoelectronic devices. GaN layers are deposited by MOCVD on silicon Si(111) using AlGaN buffer layer. We have studied the microstructure quality of the films. From SEM, TEM and AFM observations, we have observed that the films exhibit a good quality: the films are highly oriented (0001) with a smooth surface morphology (roughness of 12nm). We have completely characterized the optical properties using the prism coupling technique.

Original languageEnglish
Title of host publicationModern Technologies for Engineering, Applied Mechanics and Material Science
PublisherTrans Tech Publications Ltd
Pages41-45
Number of pages5
ISBN (Print)9783038351580
DOIs
Publication statusPublished - 1 Jan 2014
Event5th International Conference on Manufacturing Science and Technology, ICMST 2014 - Sarawak, Malaysia
Duration: 7 Jun 20148 Jun 2014

Publication series

NameAdvanced Materials Research
Volume980
ISSN (Print)1022-6680
ISSN (Electronic)1662-8985

Conference

Conference5th International Conference on Manufacturing Science and Technology, ICMST 2014
CountryMalaysia
CitySarawak
Period7/06/148/06/14

Keywords

  • Gallium nitride
  • Microstructure
  • Optical characterizations
  • Refractive index
  • Silicon

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