@inproceedings{8a79cf6e940f4ab28c4784f944cd4972,
title = "Optical properties of gallium nitride heterostructures grown on silicon for waveguiding application",
abstract = "Gallium nitride (GaN) on silicon (Si) is governed by the possibility to use this family of semiconductor for novel optoelectronic devices. GaN layers are deposited by MOCVD on silicon Si(111) using AlGaN buffer layer. We have studied the microstructure quality of the films. From SEM, TEM and AFM observations, we have observed that the films exhibit a good quality: the films are highly oriented (0001) with a smooth surface morphology (roughness of 12nm). We have completely characterized the optical properties using the prism coupling technique.",
keywords = "Gallium nitride, Microstructure, Optical characterizations, Refractive index, Silicon",
author = "Irma Saraswati and Arnaud Stolz and S. Ko and Elhadj Dogheche and Poespawati, {Nji Raden} and Purnamaningsih, {Retno Wigajatri} and Didier Decoster",
year = "2014",
doi = "10.4028/www.scientific.net/AMR.980.41",
language = "English",
isbn = "9783038351580",
series = "Advanced Materials Research",
publisher = "Trans Tech Publications Ltd",
pages = "41--45",
booktitle = "Modern Technologies for Engineering, Applied Mechanics and Material Science",
note = "5th International Conference on Manufacturing Science and Technology, ICMST 2014 ; Conference date: 07-06-2014 Through 08-06-2014",
}