Optical conductivity calculation of a k.p model semiconductor GaAs incorporating first-order electron-hole vertex correction

Maryam Nurhuda, Muhammad Aziz Majidi

Research output: Contribution to journalConference articlepeer-review

Abstract

The role of excitons in semiconducting materials carries potential applications. Experimental results show that excitonic signals also appear in optical absorption spectra of semiconductor system with narrow gap, such as Gallium Arsenide (GaAs). While on the theoretical side, calculation of optical spectra based purely on Density Functional Theory (DFT) without taking electron-hole (e-h) interactions into account does not lead to the appearance of any excitonic signal. Meanwhile, existing DFT-based algorithms that include a full vertex correction through Bethe-Salpeter equation may reveal an excitonic signal, but the algorithm has not provided a way to analyze the excitonic signal further. Motivated to provide a way to isolate the excitonic effect in the optical response theoretically, we develop a method of calculation for the optical conductivity of a narrow band-gap semiconductor GaAs within the 8-band k.p model that includes electron-hole interactions through first-order electron-hole vertex correction. Our calculation confirms that the first-order e-h vertex correction reveals excitonic signal around 1.5 eV (the band gap edge), consistent with the experimental data.

Original languageEnglish
Article number012076
JournalJournal of Physics: Conference Series
Volume1011
Issue number1
DOIs
Publication statusPublished - 9 May 2018
Event2017 International Conference on Theoretical and Applied Physics, ICTAP 2017 - Yogyakarta, Indonesia
Duration: 6 Sep 20178 Sep 2017

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