One step deposition of Cu(In1-xAlx)Se2 thin films by RF magnetron sputtering

Badrul Munir, Rachmat A. Wibowo, Eun Soo Lee, Kyoo Ho Kim

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Cu(In1-xAlx)Se2 thin films were deposited by one-step RF magnetron sputtering. The target was composed of mixed binary selenides of CuSe, InSe and pure aluminum powder. Smooth films surfaces with good adhesion to the substrate were grown successfully. All of the films show strong (112) and (204/220) single phase CuInSe2 peaks. Addition of Al to the target up to 6 wt-%, at the expense of indium, shifts the orientation peaks towards higher 2θ yielding films with an optical band gap between 1.05-1.7 eV. For the first time, this paper reports the application of a one step sputtering deposition process to grow Cu(In1-xAl x)Se2 thin films for solar cell absorber applications.

Original languageEnglish
Pages (from-to)252-255
Number of pages4
JournalJournal of Ceramic Processing Research
Issue number4
Publication statusPublished - 2007


  • Band gap
  • CuInSe
  • Solar cells
  • Sputtering
  • Thin films


Dive into the research topics of 'One step deposition of Cu(In1-xAlx)Se2 thin films by RF magnetron sputtering'. Together they form a unique fingerprint.

Cite this