Observation of nanosize effect in lateral nanoscale p-n and p-i-n junctions

Arief Udhiarto, Sri Purwiyanti, Daniel Moraru, Takeshi Mizuno, Michiharu Tabe

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We study nanosize-effect in lateral nanoscale p-n and p-i-n junction devices under light illumination. Current versus voltage (I-V) and current versus time (I-time) characteristics were investigated at low and at room temperature. At low temperature, only p-n junction devices show a photon sensitivity in I-V characteristics due to co-existence of donor-acceptor pair. At room temperature, both devices show photovoltaic nature, i.e., increase of reverse current is observed under light illumination. In addition, devices with narrow channel-width tend to produce larger photocurrent which is ascribed to the nanosize effect.

Original languageEnglish
Title of host publication2013 International Conference on Quality in Research, QiR 2013 - In Conjunction with ICCS 2013
Subtitle of host publicationThe 2nd International Conference on Civic Space
Pages14-18
Number of pages5
DOIs
Publication statusPublished - 18 Dec 2013
Event2013 13th International Conference on Quality in Research, QiR 2013 - In Conjunction with the 2nd International Conference on Civic Space, ICCS 2013 - Yogyakarta, Indonesia
Duration: 25 Jun 201328 Jun 2013

Publication series

Name2013 International Conference on Quality in Research, QiR 2013 - In Conjunction with ICCS 2013: The 2nd International Conference on Civic Space

Conference

Conference2013 13th International Conference on Quality in Research, QiR 2013 - In Conjunction with the 2nd International Conference on Civic Space, ICCS 2013
CountryIndonesia
CityYogyakarta
Period25/06/1328/06/13

Keywords

  • individual dopants
  • Nanoscale p-n and p-i-n junctions
  • nanosize effect

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