Keyphrases
Through Silicon via
100%
Cu Protrusion
100%
Protrusion
80%
Annealing
40%
Fabrication Methods
40%
Annealing Temperature
40%
3D IC
40%
Finite Element Analysis
40%
Numerical Results
20%
Nitrogen Gas
20%
Scanning Electron Microscope
20%
High Performance
20%
Gas Environment
20%
Processing Difficulty
20%
Reliability Issues
20%
Grain Size Evolution
20%
Integrated Circuit Packaging
20%
Electron Backscatter Diffraction
20%
Delamination
20%
Metal Layer
20%
Diffraction Methods
20%
Cu TSV
20%
Packaging Technology
20%
Atomic Force Microscope
20%
Back-end-of-line
20%
Coefficient of Thermal Expansion
20%
High Stress
20%
Grain Size Distribution
20%
Annealing Duration
20%
Microchip
20%
Silicon Wafer
20%
Integrated Circuit Technology
20%
Engineering
Annealing Temperature
100%
Three Dimensional Integrated Circuits
100%
Finite Element Analysis
100%
Simulation Result
50%
Parametric Study
50%
Interconnects
50%
Copper (Cu)
50%
Metal Layer
50%
Atomic Force Microscope
50%
Silicon Wafer
50%
Gas Environment
50%
Coefficient of Thermal Expansion
50%
Delamination
50%
Scanning Electron Microscope
50%
Material Science
Silicon
100%
Electronic Circuit
33%
Finite Element Method
33%
Scanning Electron Microscopy
16%
Grain Size
16%
Diffraction Measurement
16%
Electron Backscatter Diffraction
16%
Thermal Expansion
16%
Silicon Wafer
16%
Delamination
16%