TY - JOUR
T1 - Non-sulfurization single solution approach to synthesize CZTS thin films
AU - Munir, Badrul
AU - Prastyo, Bayu Eko
AU - Muslih, Ersan Yudhapratama
AU - Nurjaya, Dwi Marta
N1 - Publisher Copyright:
© IJTech 2016.
PY - 2016
Y1 - 2016
N2 - The growth and crystallization processes of the Cu2ZnSnS4 (CZTS) phase typically rely on high-temperature sulfurization, which involves a harmful chalcogen-containing atmosphere. Together with the use of high-toxicity solvents, these processes could hinder the widespread adoption of this technology in the mass production of CZTS semiconductors for solar cell application. Thus, we studied the formation of CZTS films from ethanol-based precursors without the sulfurization step, fully employing the non-toxic solvent and avoiding the environmentally harmful sulfur-containing atmosphere. The certain addition of 2-mercaptopropionic acid led to the formation of a clear and stable sulfur-containing precursor. The precursors were successfully deposited onto soda lime glass by employing spin coater. CZTS crystallinity in the identified XRD patterns was vanishingly small in the case of eliminating the sulfurization process. Moreover, the carbon concentration and grain size of the resulting films were controlled by changing the time period of drying treatment during film fabrication. A drying time of 120 minutes, which demonstrated a CZTS grain size of ± 1 μm with a direct optical energy gap around 1.4 eV, was confirmed as the ideal condition. These results may provide a useful route toward environment-friendly strategies for the production of a CZTS semiconductor that is compatible with the absorber application in thin-film solar cells.
AB - The growth and crystallization processes of the Cu2ZnSnS4 (CZTS) phase typically rely on high-temperature sulfurization, which involves a harmful chalcogen-containing atmosphere. Together with the use of high-toxicity solvents, these processes could hinder the widespread adoption of this technology in the mass production of CZTS semiconductors for solar cell application. Thus, we studied the formation of CZTS films from ethanol-based precursors without the sulfurization step, fully employing the non-toxic solvent and avoiding the environmentally harmful sulfur-containing atmosphere. The certain addition of 2-mercaptopropionic acid led to the formation of a clear and stable sulfur-containing precursor. The precursors were successfully deposited onto soda lime glass by employing spin coater. CZTS crystallinity in the identified XRD patterns was vanishingly small in the case of eliminating the sulfurization process. Moreover, the carbon concentration and grain size of the resulting films were controlled by changing the time period of drying treatment during film fabrication. A drying time of 120 minutes, which demonstrated a CZTS grain size of ± 1 μm with a direct optical energy gap around 1.4 eV, was confirmed as the ideal condition. These results may provide a useful route toward environment-friendly strategies for the production of a CZTS semiconductor that is compatible with the absorber application in thin-film solar cells.
KW - CuZnSnS semiconductor
KW - Drying treatment
KW - Sulfur-containing precursor
KW - Sulfurization
KW - Thin-film solar cells
UR - http://www.scopus.com/inward/record.url?scp=85010375855&partnerID=8YFLogxK
U2 - 10.14716/ijtech.v7i8.6887
DO - 10.14716/ijtech.v7i8.6887
M3 - Article
AN - SCOPUS:85010375855
SN - 2087-2100
VL - 7
SP - 1326
EP - 1334
JO - International Journal of Technology
JF - International Journal of Technology
IS - 8
ER -