@inproceedings{ce15019222b142309e0fc81ebbb16730,
title = "Non-radiative recombination in a-Si:H",
abstract = "Frequency-resolved photoluminescence spectroscopy (FRS) is used to study non-radiative recombination in a-Si:H using generation rates sufficiently small to garantee geminate recombination at low temperature. The quenching of the photoluminescence by a higher defect density ND and an increase of temperature influences the QFRS spectra differently: Whereas for increasing NDthe quenching of the signal is more pronounced on the low frequency side raising temperature leads to a uniform decrease in the entire frequency range. The dependence of the lifetime distribution on ND is quantitatively explained in a model where radiative recombination competes with non-radiative tunneling into defect states.",
author = "M. Schubert and R. Stachowitz and Rosari Saleh and W. Fuhs",
year = "1994",
doi = "10.1557/proc-336-189",
language = "English",
isbn = "1558992367",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "189--194",
booktitle = "Amorphous Silicon Technology - 1994",
address = "United States",
note = "1994 MRS Spring Meeting ; Conference date: 04-04-1994 Through 08-04-1994",
}