Non-radiative recombination in a-Si:H

M. Schubert, R. Stachowitz, Rosari Saleh, W. Fuhs

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Frequency-resolved photoluminescence spectroscopy (FRS) is used to study non-radiative recombination in a-Si:H using generation rates sufficiently small to garantee geminate recombination at low temperature. The quenching of the photoluminescence by a higher defect density ND and an increase of temperature influences the QFRS spectra differently: Whereas for increasing NDthe quenching of the signal is more pronounced on the low frequency side raising temperature leads to a uniform decrease in the entire frequency range. The dependence of the lifetime distribution on ND is quantitatively explained in a model where radiative recombination competes with non-radiative tunneling into defect states.

Original languageEnglish
Title of host publicationAmorphous Silicon Technology - 1994
Pages189-194
Number of pages6
Publication statusPublished - 1 Dec 1994
Event1994 MRS Spring Meeting - San Francisco, CA, United States
Duration: 4 Apr 19948 Apr 1994

Publication series

NameMaterials Research Society Symposium Proceedings
Volume336
ISSN (Print)0272-9172

Conference

Conference1994 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/04/948/04/94

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