Noise modeling of source inductive degeneration low noise amplifier in 0.18-μm CMOS technology

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Citations (Scopus)

Abstract

This paper presents a mathematical modeling of noise performance in source inductive degeneration topology which widely used in narrow band amplifier. The proposed model is conducted by utilizing a small-signal MOSFET model to generate the effective transconductance of circuits. The performance of noise figure can be preserved by selecting the device width while preserving a stable bias voltages and maintaining the device length unchanged. Using the mathematical model, a low noise amplifier is designed and obtain the noise figure of 2.5-dB, an remarkable figure of merit among reported LNAs in 0.18-μm CMOS technology.

Original languageEnglish
Title of host publicationProceeding - IEEE COMNETSAT 2013
Subtitle of host publicationIEEE International Conference on Communication, Networks and Satellite
PublisherIEEE Computer Society
Pages15-20
Number of pages6
ISBN (Print)9781467360562
DOIs
Publication statusPublished - 1 Jan 2013
Event2013 IEEE International Conference on Communication, Networks and Satellite, IEEE COMNETSAT 2013 - Yogyakarta, Indonesia
Duration: 3 Dec 20134 Dec 2013

Publication series

NameProceeding - IEEE COMNETSAT 2013: IEEE International Conference on Communication, Networks and Satellite

Conference

Conference2013 IEEE International Conference on Communication, Networks and Satellite, IEEE COMNETSAT 2013
Country/TerritoryIndonesia
CityYogyakarta
Period3/12/134/12/13

Keywords

  • 0.18-μm CMOS Technology
  • LNA
  • noise
  • RF

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