Modelling of abrupt junction HBT using the effect of diffusion, drift and thermionic emission mechanism

Nji Raden Poespawati; Engelin Shintadewi Julian; F. Astha Ekadiyanto; Djoko Hartanto

Modelling of abrupt junction HBT using the effect of diffusion, drift and thermionic emission mechanism

Nji Raden Poespawati, Engelin Shintadewi Julian, F. Astha Ekadiyanto, Djoko Hartanto

Department of Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

In abrupt junction there is discontinuity in the conduction and valence band and the energy level variation is much more that kT in a very small distance, therefore a model of abrupt junction Heterojunction Bipolar Transistor (HBT) will be proposed. In this paper, the model which is used concerned the diffusion, drift and thermionic emission mechanism. Then, the model is applied to determine base current and collector current density of S _i/S _i0.75Ge _0.25 HBT with base thickness 20,30,40,50,60 nm. The results show that the collector current density is increased and the base current density reduced since the base thickness have a tendency more and more thin. By validating of the model it has been seen that the value of collector and base current of this work had the same orde as those of Lopez and Kasper.

Original language	English
Pages	411-414
Number of pages	4
Publication status	Published - 1999
Event	8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 - Singapore, Singapore Duration: 8 Sep 1999 → 10 Sep 1999

Conference

Conference	8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99
Country/Territory	Singapore
City	Singapore
Period	8/09/99 → 10/09/99

Cite this

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title = "Modelling of abrupt junction HBT using the effect of diffusion, drift and thermionic emission mechanism",

abstract = "In abrupt junction there is discontinuity in the conduction and valence band and the energy level variation is much more that kT in a very small distance, therefore a model of abrupt junction Heterojunction Bipolar Transistor (HBT) will be proposed. In this paper, the model which is used concerned the diffusion, drift and thermionic emission mechanism. Then, the model is applied to determine base current and collector current density of S i/S i0.75Ge 0.25 HBT with base thickness 20,30,40,50,60 nm. The results show that the collector current density is increased and the base current density reduced since the base thickness have a tendency more and more thin. By validating of the model it has been seen that the value of collector and base current of this work had the same orde as those of Lopez and Kasper.",

author = "Poespawati, {Nji Raden} and {Shintadewi Julian}, Engelin and {Astha Ekadiyanto}, F. and Djoko Hartanto",

year = "1999",

language = "English",

pages = "411--414",

note = "8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 ; Conference date: 08-09-1999 Through 10-09-1999",

}

Modelling of abrupt junction HBT using the effect of diffusion, drift and thermionic emission mechanism. / Poespawati, Nji Raden; Shintadewi Julian, Engelin; Astha Ekadiyanto, F.; Hartanto, Djoko.

1999. 411-414 Paper presented at 8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99, Singapore, Singapore.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Modelling of abrupt junction HBT using the effect of diffusion, drift and thermionic emission mechanism

AU - Poespawati, Nji Raden

AU - Shintadewi Julian, Engelin

AU - Astha Ekadiyanto, F.

AU - Hartanto, Djoko

PY - 1999

Y1 - 1999

N2 - In abrupt junction there is discontinuity in the conduction and valence band and the energy level variation is much more that kT in a very small distance, therefore a model of abrupt junction Heterojunction Bipolar Transistor (HBT) will be proposed. In this paper, the model which is used concerned the diffusion, drift and thermionic emission mechanism. Then, the model is applied to determine base current and collector current density of S i/S i0.75Ge 0.25 HBT with base thickness 20,30,40,50,60 nm. The results show that the collector current density is increased and the base current density reduced since the base thickness have a tendency more and more thin. By validating of the model it has been seen that the value of collector and base current of this work had the same orde as those of Lopez and Kasper.

AB - In abrupt junction there is discontinuity in the conduction and valence band and the energy level variation is much more that kT in a very small distance, therefore a model of abrupt junction Heterojunction Bipolar Transistor (HBT) will be proposed. In this paper, the model which is used concerned the diffusion, drift and thermionic emission mechanism. Then, the model is applied to determine base current and collector current density of S i/S i0.75Ge 0.25 HBT with base thickness 20,30,40,50,60 nm. The results show that the collector current density is increased and the base current density reduced since the base thickness have a tendency more and more thin. By validating of the model it has been seen that the value of collector and base current of this work had the same orde as those of Lopez and Kasper.

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M3 - Paper

AN - SCOPUS:1842678148

SP - 411

EP - 414

T2 - 8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99

Y2 - 8 September 1999 through 10 September 1999

ER -

Modelling of abrupt junction HBT using the effect of diffusion, drift and thermionic emission mechanism

Abstract

Conference

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