In abrupt junction there is discontinuity in the conduction and valence band and the energy level variation is much more that kT in a very small distance, therefore a model of abrupt junction Heterojunction Bipolar Transistor (HBT) will be proposed. In this paper, the model which is used concerned the diffusion, drift and thermionic emission mechanism. Then, the model is applied to determine base current and collector current density of S i/S i0.75Ge 0.25 HBT with base thickness 20,30,40,50,60 nm. The results show that the collector current density is increased and the base current density reduced since the base thickness have a tendency more and more thin. By validating of the model it has been seen that the value of collector and base current of this work had the same orde as those of Lopez and Kasper.
|Number of pages||4|
|Publication status||Published - 1999|
|Event||8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99 - Singapore, Singapore|
Duration: 8 Sep 1999 → 10 Sep 1999
|Conference||8th International Symposium on Integrated Circuits, Devices and Systems, ISIC 99|
|Period||8/09/99 → 10/09/99|