Modelling electric field influence on density of states (dos) and localization length of poly(da)-poly(dt) dna

F. Rahmani, E. Yudiarsah

Research output: Contribution to journalConference articlepeer-review

Abstract

DNA based microelectronics technology have been developed in the last couple of years, but researchers found that its stability can be volatile to the change in its environment. In this research, electron transport in DNA poly(dA)-(dT) have been analysed by observing its density of states (DOS) and localization length. Retarded green function is used to calculate DOS, whereas transfer-matrix method is employed in calculating localization length in order to determine the electronic structure of the DNA. Along the z-axis of DNA electric field is applied, it will alter hopping constant between sites in DNA. Tight binding model is incorporated with Miller-Abraham expression to yield electric field and also temperature influence in DOS. Effect of medium is considered within the calculation. The results tell us that as the electric field increases, the value of DOS decreases, so that the localization length. The increment of temperature also shows similar trend.

Original languageEnglish
Article number012025
JournalIOP Conference Series: Materials Science and Engineering
Volume578
Issue number1
DOIs
Publication statusPublished - 4 Oct 2019
Event3rd International Conference on Advanced Material for Better Future 2018, ICAMBF 2018 - Surakarta, Central Java, Indonesia
Duration: 15 Oct 201816 Oct 2018

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