TY - GEN
T1 - Microstructure investigation of TSV copper film
AU - Putra, Wahyuaji Narottama
AU - Li, H. Y.
AU - Trigg, A. D.
AU - Gan, C. L.
PY - 2013
Y1 - 2013
N2 - Copper Through-Silicon Via (Cu TSV) is becoming a key technology for three dimensional (3D) packaging and 3D integrated circuit (IC) applications. The microstructure of the Cu TSV is important as it not only affects the electrical properties, but ma y play a role in its reliability such as protrusion. In this study, physical vapor deposition (PVD) and electroplated (ECP) Cu TSV microstructure evolution with Ti and Ta barrier after thermal annealing was investigated. As deposited PVD Cu grain showed a preferred orientation on (111) and transformed into (001) after annealing. On the other hand, ECP Cu grain orientation appears to be random for both samples before and after annealing. The grain size for both PVD and ECP increased substantially after annealing at 410°C 30 min because of grain growth. However, the grain growth was more significant in Ti-barrier Cu TSV sample than the Ta-barrier one.
AB - Copper Through-Silicon Via (Cu TSV) is becoming a key technology for three dimensional (3D) packaging and 3D integrated circuit (IC) applications. The microstructure of the Cu TSV is important as it not only affects the electrical properties, but ma y play a role in its reliability such as protrusion. In this study, physical vapor deposition (PVD) and electroplated (ECP) Cu TSV microstructure evolution with Ti and Ta barrier after thermal annealing was investigated. As deposited PVD Cu grain showed a preferred orientation on (111) and transformed into (001) after annealing. On the other hand, ECP Cu grain orientation appears to be random for both samples before and after annealing. The grain size for both PVD and ECP increased substantially after annealing at 410°C 30 min because of grain growth. However, the grain growth was more significant in Ti-barrier Cu TSV sample than the Ta-barrier one.
UR - http://www.scopus.com/inward/record.url?scp=84883396960&partnerID=8YFLogxK
U2 - 10.1109/ECTC.2013.6575758
DO - 10.1109/ECTC.2013.6575758
M3 - Conference contribution
AN - SCOPUS:84883396960
SN - 9781479902330
T3 - Proceedings - Electronic Components and Technology Conference
SP - 1414
EP - 1419
BT - 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
T2 - 2013 IEEE 63rd Electronic Components and Technology Conference, ECTC 2013
Y2 - 28 May 2013 through 31 May 2013
ER -