Microstructure characterization of amorphous silicon based alloys by inert gas effusion studies

W. Beyer; S. S. Camargo; R. Saleh

doi:10.1557/proc-609-a23.4

Microstructure characterization of amorphous silicon based alloys by inert gas effusion studies

W. Beyer
, S. S. Camargo
, R. Saleh

Department of Physics

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

It is shown that inert gas effusion employing implanted neon and argon atoms is a useful tool for microstructure characterization of a-Si based alloys. The method measures sensitively interconnected voids and gives information about sizes of microstructure. Limitations of the method are discussed. The results show network reconstruction effects in a-Si:O:H and a-Si:C:H alloys as a function of annealing.

Original language	English
Pages (from-to)	A2341-A2346
Journal	Materials Research Society Symposium-Proceedings
Volume	609
DOIs	https://doi.org/10.1557/proc-609-a23.4
Publication status	Published - 2000

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title = "Microstructure characterization of amorphous silicon based alloys by inert gas effusion studies",

abstract = "It is shown that inert gas effusion employing implanted neon and argon atoms is a useful tool for microstructure characterization of a-Si based alloys. The method measures sensitively interconnected voids and gives information about sizes of microstructure. Limitations of the method are discussed. The results show network reconstruction effects in a-Si:O:H and a-Si:C:H alloys as a function of annealing.",

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doi = "10.1557/proc-609-a23.4",

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AU - Beyer, W.

AU - Camargo, S. S.

AU - Saleh, R.

PY - 2000

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N2 - It is shown that inert gas effusion employing implanted neon and argon atoms is a useful tool for microstructure characterization of a-Si based alloys. The method measures sensitively interconnected voids and gives information about sizes of microstructure. Limitations of the method are discussed. The results show network reconstruction effects in a-Si:O:H and a-Si:C:H alloys as a function of annealing.

AB - It is shown that inert gas effusion employing implanted neon and argon atoms is a useful tool for microstructure characterization of a-Si based alloys. The method measures sensitively interconnected voids and gives information about sizes of microstructure. Limitations of the method are discussed. The results show network reconstruction effects in a-Si:O:H and a-Si:C:H alloys as a function of annealing.

UR - https://www.scopus.com/pages/publications/0034429061

U2 - 10.1557/proc-609-a23.4

DO - 10.1557/proc-609-a23.4

M3 - Article

AN - SCOPUS:0034429061

SN - 0272-9172

VL - 609

SP - A2341-A2346

JO - Materials Research Society Symposium-Proceedings

JF - Materials Research Society Symposium-Proceedings

ER -

Microstructure characterization of amorphous silicon based alloys by inert gas effusion studies

Abstract

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