Abstract
It is shown that inert gas effusion employing implanted neon and argon atoms is a useful tool for microstructure characterization of a-Si based alloys. The method measures sensitively interconnected voids and gives information about sizes of microstructure. Limitations of the method are discussed. The results show network reconstruction effects in a-Si:O:H and a-Si:C:H alloys as a function of annealing.
Original language | English |
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Pages (from-to) | A2341-A2346 |
Journal | Materials Research Society Symposium-Proceedings |
Volume | 609 |
DOIs | |
Publication status | Published - 2000 |