TY - JOUR
T1 - Microstructure characterization in dc sputtered a-SiC:H films by inert gas effusion measurements
AU - Saleh, R.
AU - Munisa, L.
AU - Beyer, W.
N1 - Funding Information:
The authors thank M. Gebauer, A. Dahmen and W. Michelsen for the ion implantations, This work was supported in part by funds of bilateral collaboration programs of the International Bureau of BMBF (Germany) with Universitas Indonesia (Indonesia). R.S. and L.M. acknowledge financial support by University Research Graduate Education Project (URGE Project) under contract 005/HTPP-III/URGE/1997 (Indonesia).
PY - 2004/6/15
Y1 - 2004/6/15
N2 - The effusion of argon, neon and helium as well as of hydrogen was used for microstructure characterization of dc sputtered amorphous silicon carbon (a-SiC:H) alloys deposited with various carbon and hydrogen contents. Inert gas atoms were incorporated into the material by ion implantation. Our results suggest that effusion of implanted inert gas atoms is a useful method for microstructure characterisation of a-Si:C:H films.
AB - The effusion of argon, neon and helium as well as of hydrogen was used for microstructure characterization of dc sputtered amorphous silicon carbon (a-SiC:H) alloys deposited with various carbon and hydrogen contents. Inert gas atoms were incorporated into the material by ion implantation. Our results suggest that effusion of implanted inert gas atoms is a useful method for microstructure characterisation of a-Si:C:H films.
UR - http://www.scopus.com/inward/record.url?scp=2942618582&partnerID=8YFLogxK
U2 - 10.1016/j.jnoncrysol.2004.03.032
DO - 10.1016/j.jnoncrysol.2004.03.032
M3 - Article
AN - SCOPUS:2942618582
SN - 0022-3093
VL - 338-340
SP - 517
EP - 520
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - 1 SPEC. ISS.
ER -